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BA01303 bảng dữ liệu(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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BA01303 bảng dữ liệu(HTML) 2 Page - Mitsubishi Electric Semiconductor |
2 / 3 page MITSUBISHI SEMICONDUCTOR <InGaP Module> BA01303 Triple Band(EGSM900/DCS1800/PCS1900) InGaP HBT Front-end module ABSOLUTE MAXIMUM RATINGS (Ta=25deg.C) Symbol Parameter Ratings Unit Vc Supply voltage 7 V Vpc Power control voltage 3 V Vband External voltage for band select 3 V Pin Input power 10 dBm Tc(op) Operating case temperature -30 - +85 deg.C Tstg Storage temperature -40 - +100 deg.C Note: Each maximum rating is guaranteed independently under pulse operation (duty cycle 4:8). ELECTRICAL CHARACTERISTICS (Ta=25deg.C) (Tx mode) Vc=3.5V, Po=33/30dBm, Pin=3dBm, Vcont(1/2)=2.6V, Vpc<2.6V, Duty cycle 2:8 Limits Parameter Symbol Condition MIN TYP MAX Unit EGSM 880 - 915 Frequency range(Tx) f DCS/PCS 1710 - 1910 MHz Supply voltage Vc 3.1 3.5 4.5 V EGSM 33.0 33.5 - Output power Po Vc=3.5V,Vpc=2.6V Pin=3dBm,Vcont=2.6V DCS/PCS 30.0 30.5 - dBm EGSM 38 43 - Efficiency Eff DCS/PCS 30 35 - % Control voltage range Vpc 0.2 - 2.6 V Power control current Ipc - 4.0 5.5 mA Band select current Iband Vband=2.6V - 0.7 1.2 mA 2 - 14fo EGSM - - -33 2 - 7fo DCS - - -33 Harmonics 2 - 6fo PCS - - -33 dBm Leakage current Ileak Vc=4.5V,Vpc=0V No input power - 10 40 uA EGSM 18.5 20.0 21.5 Coupling value Pm DCS/PCS 12.5 14.0 15.5 dBc Rx(EGSM) port - - 15 Isolation for Rx Prx Rx(DCS/PCS) port - - 13 dBm Isolation 1 Iso1 Vpc=0V,Vcont=2.6V - - -38 dBm Isolation 2 Iso2 Vpc=0V,Vcont=0V - - -50 dBm EGSM(@935MHz) - - -82 Rx noise power Np DCS/PCS - - -75 dBm/ 100kH Switching time ts - - 2 usec Stability OSC Vc=3.5V , Vpc=0.2 - 2.6V Load VSWR=10:1 (all phase) No oscillation more than -36dBm EGSM 925 - 960 DCS 1805 - 1880 Frequency range(Rx) f PCS 1930 - 1990 MHz Vcont1,2,3=0V EGSM - 1.1 1.3 Vcont1,2,3=0V DCS - 1.3 1.5 Insertion loss (Rx) IL Vcont1,2=0V, Vcont3=2.6V PCS - 1.3 1.5 dB Jan./2004 (2/3) |
Số phần tương tự - BA01303 |
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Mô tả tương tự - BA01303 |
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