MITSUBISHI SEMICONDUCTOR <InGaP Module>

BA01303

Triple Band(EGSM900/DCS1800/PCS1900) InGaP HBT Front-end module

ABSOLUTE MAXIMUM RATINGS (Ta=25deg.C)

Symbol

Parameter

Ratings

Unit

Vc

Supply voltage

7

V

Vpc

Power control voltage

3

V

Vband

External voltage for band select

3

V

Pin

Input power

10

dBm

Tc(op)

Operating case temperature

-30 - +85

deg.C

Tstg

Storage temperature

-40 - +100

deg.C

Note: Each maximum rating is guaranteed independently under pulse operation (duty cycle 4:8).

ELECTRICAL CHARACTERISTICS (Ta=25deg.C)

(Tx mode) Vc=3.5V, Po=33/30dBm, Pin=3dBm, Vcont(1/2)=2.6V, Vpc<2.6V, Duty cycle 2:8

Limits

Parameter

Symbol

Condition

MIN

TYP

MAX

Unit

EGSM

880

-

915

Frequency range(Tx)

f

DCS/PCS

1710

-

1910

MHz

Supply voltage

Vc

3.1

3.5

4.5

V

EGSM

33.0

33.5

-

Output power

Po

Vc=3.5V,Vpc=2.6V

Pin=3dBm,Vcont=2.6V

DCS/PCS

30.0

30.5

-

dBm

EGSM

38

43

-

Efficiency

Eff

DCS/PCS

30

35

-

%

Control voltage range

Vpc

0.2

-

2.6

V

Power control current

Ipc

-

4.0

5.5

mA

Band select current

Iband

Vband=2.6V

-

0.7

1.2

mA

2 - 14fo

EGSM

-

-

-33

2 - 7fo

DCS

-

-

-33

Harmonics

2 - 6fo

PCS

-

-

-33

dBm

Leakage current

Ileak

Vc=4.5V,Vpc=0V

No input power

-

10

40

uA

EGSM

18.5

20.0

21.5

Coupling value

Pm

DCS/PCS

12.5

14.0

15.5

dBc

Rx(EGSM) port

-

-

15

Isolation for Rx

Prx

Rx(DCS/PCS) port

-

-

13

dBm

Isolation 1

Iso1

Vpc=0V,Vcont=2.6V

-

-

-38

dBm

Isolation 2

Iso2

Vpc=0V,Vcont=0V

-

-

-50

dBm

EGSM(@935MHz)

-

-

-82

Rx noise power

Np

DCS/PCS

-

-

-75

dBm/

100kH

Switching time

ts

-

-

2

usec

Stability

OSC

Vc=3.5V , Vpc=0.2 - 2.6V

Load VSWR=10:1 (all phase)

No oscillation

more than -36dBm

EGSM

925

-

960

DCS

1805

-

1880

Frequency range(Rx)

f

PCS

1930

-

1990

MHz

Vcont1,2,3=0V

EGSM

-

1.1

1.3

Vcont1,2,3=0V

DCS

-

1.3

1.5

Insertion loss (Rx)

IL

Vcont1,2=0V, Vcont3=2.6V

PCS

-

1.3

1.5

dB

Jan./2004

(2/3)