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IRF1312PBF bảng dữ liệu(PDF) 2 Page - International Rectifier |
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IRF1312PBF bảng dữ liệu(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRF1312/S/LPbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 92 ––– ––– S VDS = 25V, ID = 57A Qg Total Gate Charge ––– 93 140 ID = 57A Qgs Gate-to-Source Charge ––– 36 ––– nC VDS = 40V Qgd Gate-to-Drain ("Miller") Charge ––– 34 ––– VGS = 10V, td(on) Turn-On Delay Time ––– 25 ––– VDD = 40V tr Rise Time ––– 130 ––– ID = 57A td(off) Turn-Off Delay Time ––– 47 ––– RG = 4.5Ω tf Fall Time ––– 51 ––– VGS = 10V Ciss Input Capacitance ––– 5450 ––– VGS = 0V Coss Output Capacitance ––– 550 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 340 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 1910 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 380 ––– VGS = 0V, VDS = 64V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 620 ––– VGS = 0V, VDS = 0V to 64V Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 250 mJ IAR Avalanche Current ––– 57 A EAR Repetitive Avalanche Energy ––– 21 mJ Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 57A, VGS = 0V trr Reverse Recovery Time ––– 64 96 ns TJ = 25°C, IF = 57A Qrr Reverse RecoveryCharge ––– 150 230 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Diode Characteristics 95 380 A Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 80 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.078 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 6.6 10 m Ω VGS = 10V, ID = 57A VGS(th) Gate Threshold Voltage 3.5 ––– 5.5 V VDS = VGS, ID = 250µA ––– ––– 1.0 µA VDS = 76V, VGS = 0V ––– ––– 250 VDS = 64V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V IGSS IDSS Drain-to-Source Leakage Current |
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