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FDZ202P bảng dữ liệu(PDF) 2 Page - Fairchild Semiconductor

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Giải thích chi tiết về linh kiện  P-Channel 2.5V Specified PowerTrench BGA MOSFET
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nhà sản xuất  FAIRCHILD [Fairchild Semiconductor]
Trang chủ  http://www.fairchildsemi.com
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FDZ202P bảng dữ liệu(HTML) 2 Page - Fairchild Semiconductor

  FDZ202P Datasheet HTML 1Page - Fairchild Semiconductor FDZ202P Datasheet HTML 2Page - Fairchild Semiconductor FDZ202P Datasheet HTML 3Page - Fairchild Semiconductor FDZ202P Datasheet HTML 4Page - Fairchild Semiconductor FDZ202P Datasheet HTML 5Page - Fairchild Semiconductor FDZ202P Datasheet HTML 6Page - Fairchild Semiconductor  
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FDZ202P Rev D2 (W)
Electrical Characteristics
T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = –250 µA
–20
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = –250 µA, Referenced to 25°C
–17
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = –16 V,
VGS = 0 V
–1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = –12 V,
VDS = 0 V
–100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = 12 V,
VDS = 0 V
100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = –250 µA
–0.6
–0.9
–1.5
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = –250 µA, Referenced to 25°C
3
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS= –4.5 V, ID= –5.5 A
VGS= –2.5 V, ID= –4.0 A
VGS= –4.5 V, ID= –5.5 A, TJ=125°C
37
57
50
45
75
65
m
gFS
Forward Transconductance
VDS = –5 V,
ID = –5.5 A
15
S
Dynamic Characteristics
Ciss
Input Capacitance
884
pF
Coss
Output Capacitance
258
pF
Crss
Reverse Transfer Capacitance
VDS = –10 V,
V GS = 0 V,
f = 1.0 MHz
103
pF
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
12
22
ns
tr
Turn–On Rise Time
9
18
ns
td(off)
Turn–Off Delay Time
36
58
ns
tf
Turn–Off Fall Time
VDD = –6 V,
ID = –1 A,
VGS = –4.5 V,
RGEN = 6 Ω
24
38
ns
Qg
Total Gate Charge
9
13
nC
Qgs
Gate–Source Charge
2
nC
Qgd
Gate–Drain Charge
VDS = –10 V,
ID = –5.5 A,
VGS = –4.5 V
3
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–1.7
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = –1.7 A (Note 2)
–0.76
–1.2
V
trr
Diode Reverse Recovery Time
25
nS
Qrr
Diode Reverse Recovery Charge
IF = –5.5 A,
diF/dt = 100 A/µs
26
nC
Notes:
1.
R
θJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to
the circuit board side of the solder ball, R
θJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the
copper chip carrier. R
θJC and RθJB are guaranteed by design while RθJA is determined by the user's board design.
a)
64°C/W when
mounted on a 1in
2 pad
of 2 oz copper, 1.5” x
1.5” x 0.062” thick
PCB
b)
128°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%


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