công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
|
FDZ202P bảng dữ liệu(PDF) 2 Page - Fairchild Semiconductor |
|
FDZ202P bảng dữ liệu(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page FDZ202P Rev D2 (W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –20 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C –17 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = –12 V, VDS = 0 V –100 nA IGSSR Gate–Body Leakage, Reverse VGS = 12 V, VDS = 0 V 100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –0.6 –0.9 –1.5 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C 3 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS= –4.5 V, ID= –5.5 A VGS= –2.5 V, ID= –4.0 A VGS= –4.5 V, ID= –5.5 A, TJ=125°C 37 57 50 45 75 65 m Ω gFS Forward Transconductance VDS = –5 V, ID = –5.5 A 15 S Dynamic Characteristics Ciss Input Capacitance 884 pF Coss Output Capacitance 258 pF Crss Reverse Transfer Capacitance VDS = –10 V, V GS = 0 V, f = 1.0 MHz 103 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 12 22 ns tr Turn–On Rise Time 9 18 ns td(off) Turn–Off Delay Time 36 58 ns tf Turn–Off Fall Time VDD = –6 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω 24 38 ns Qg Total Gate Charge 9 13 nC Qgs Gate–Source Charge 2 nC Qgd Gate–Drain Charge VDS = –10 V, ID = –5.5 A, VGS = –4.5 V 3 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current –1.7 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –1.7 A (Note 2) –0.76 –1.2 V trr Diode Reverse Recovery Time 25 nS Qrr Diode Reverse Recovery Charge IF = –5.5 A, diF/dt = 100 A/µs 26 nC Notes: 1. R θJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, R θJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. R θJC and RθJB are guaranteed by design while RθJA is determined by the user's board design. a) 64°C/W when mounted on a 1in 2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB b) 128°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% |
Số phần tương tự - FDZ202P |
|
Mô tả tương tự - FDZ202P |
|
|
Link URL |
Chính sách bảo mật |
ALLDATASHEET.VN |
Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không? [ DONATE ] |
Alldatasheet là | Quảng cáo | Liên lạc với chúng tôi | Chính sách bảo mật | Trao đổi link | Tìm kiếm theo nhà sản xuất All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |