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PZT3904 bảng dữ liệu(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
tên linh kiện PZT3904
Giải thích chi tiết về linh kiện  NPN General Purpose Amplifier
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nhà sản xuất  NSC [National Semiconductor (TI)]
Trang chủ  http://www.national.com
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PZT3904 bảng dữ liệu(HTML) 3 Page - National Semiconductor (TI)

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NPN General Purpose Amplifier
(continued)
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
2N3904
*PZT3904
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
1,000
8.0
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
125
°C/W
Symbol
Characteristic
Max
Units
**MMBT3904
MMPQ3904
PD
Total Device Dissipation
Derate above 25
°C
350
2.8
1,000
8.0
mW
mW/
°C
RθJA
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
357
125
240
°C/W
°C/W
°C/W
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
0.1
1
10
100
0.05
0.1
0.15
I
- COLLECTOR CURRENT (mA)
25 °C
C
ββ = 10
125 °C
- 40 °C
Base-Emitter Saturation
Voltage vs Collector Current
P23
0.1
1
10
100
0.4
0.6
0.8
1
I
- COLLECTOR CURRENT (mA)
C
ββ = 10
25 °C
125 °C
- 40 °C
Base-Emitter ON Voltage vs
Collector Current
0.1
1
10
100
0.2
0.4
0.6
0.8
1
I
- COLLECTOR CURRENT (mA)
C
V
= 5V
CE
25 °C
125 °C
- 40 °C
Typical Pulsed Current Gain
vs Collector Current
0.1
1
10
100
0
100
200
300
400
500
I
- COLLECTOR CURRENT (mA)
- 40º C
25 °C
C
V
= 5V
CE
125 °C
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
**Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."


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