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FDD3570 bảng dữ liệu(PDF) 1 Page - Fairchild Semiconductor |
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FDD3570 bảng dữ liệu(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page November 2000 2000 Fairchild Semiconductor Corporation FDD3570 Rev C(W) FDD3570 80V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features faster switching and lower gate change than other MOSFETs with comparable RDS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency. Features • 10 A, 80 V. RDS(ON) = 20 m Ω @ V GS = 10 V RDS(ON) = 23 m Ω @ V GS = 6 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability G S D TO-252 S D G Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 80 V VGSS Gate-Source Voltage ± 20 V Maximum Drain Current-Continuous (Note 1) 43 (Note 1a) 10 ID Maximum Drain Current – Pulsed 110 A Maximum Power Dissipation @TC = 25 oC (Note 1) 69 TA = 25 oC (Note 1a) 3.4 PD TA = 25 oC (Note 1b) 1.3 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to- Case (Note 1) 1.8 °C/W RθJA Thermal Resistance, Junction-to- Ambient (Note 1b) 96 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD3570 FDD3570 13’’ 16mm 2500 |
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