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ISL12020 bảng dữ liệu(PDF) 3 Page - Intersil Corporation

tên linh kiện ISL12020
Giải thích chi tiết về linh kiện  Low Power RTC with VDD Battery Backed SRAM and Embedded Temp Compensation 짹5ppm with Auto Day Light Saving
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nhà sản xuất  INTERSIL [Intersil Corporation]
Trang chủ  http://www.intersil.com/cda/home
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ISL12020 bảng dữ liệu(HTML) 3 Page - Intersil Corporation

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3
FN6450.0
March 29, 2007
Absolute Maximum Ratings
Thermal Information
Voltage on VDD, VBAT, SCL, SDA, and IRQ/FOUT pins
(respect to ground) . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 6.0V
Voltage on X1 and X2 pins
(respect to ground) . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 2.5V
ESD Rating
Human Body Model (Per MIL-STD-883 Method 3014) . . . . .>2kV
Machine Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .>150V
Thermal Resistance (Typical, Note 1)
θJA (°C/W)
8 Ld SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
120
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
Lead Temperature (Soldering, 10s) . . . . . . . . . . . . . . . . . . . . +300°C
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
θ
JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
DC Operating Characteristics-RTC Test Conditions: VDD = +2.7 to +5.5V, Temperature = -20°C to +70°C, unless otherwise stated.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
(Note 7)
MAX
UNITS
NOTES
VDD
Main Power Supply
2.7
5.5
V
VBAT
Battery Supply Voltage
1.8
5.5
V
2
IDD1
Supply Current
VDD = 5V
4.1
6.5
µA
3, 5
VDD = 3V
3.5
5.5
µA
3, 5
IDD2
Supply Current (I2C communications
active)
VDD = 5V
300
500
µA
3, 4
IDD3
Supply Current (Temperature
Conversion Active)
VDD = 5V
250
400
µA
3, 4
IBAT
Battery Supply Current
VBAT = 3V @ +25°C
1.0
1.6
µA
3
VBAT = 3V
1.0
2.1
µA
3
IBATLKG
Battery Input Leakage
VDD = 5.5V, VBAT = 1.8V
100
nA
ILI
Input Leakage Current on SCL
100
nA
4
ILO
I/O Leakage Current on SDA
100
nA
4
VBATM
Battery Level Monitor Threshold
-100
+100
mV
VPBM
Brown Out Level Monitor Threshold
-100
+100
mV
VTRIP
VBAT Mode Threshold
2.1
2.2
2.6
V
VTRIPHYS
VTRIP Hysteresis
10
30
50
mV
VBATHYS
VBAT Hysteresis
50
mV
9
Frequency Stability vs Temperature
2.7V
≤ VDD ≤ 3.6V,
±5
ppm
9
Frequency Stability vs Voltage
2.7V
≤ VDD ≤ 3.6V
±3
ppm
9
ATR Sensitivity per LSB
BETA (3:0) = 1000
1
ppm
9
Temperature Sensor Accuracy
VDD = VBAT = 3.3 V
±3
°C
9
IRQ/FOUT
VOL
Output Low Voltage
VDD = 5V, IOL = 3mA
0.4
V
VDD = 2.7V, IOL = 1mA
0.4
V
Power-Down Timing Test Conditions: V
DD = +2.7 to +5.5V, Temperature = -20°C to +70°C, unless otherwise stated.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
(Note 7)
MAX
UNITS
NOTES
VDD SR-
VDD Negative Slew rate
10
V/ms
8
ISL12020


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