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CA3127MZ bảng dữ liệu(PDF) 3 Page - Intersil Corporation

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Giải thích chi tiết về linh kiện  High Frequency NPN Transistor Array
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3
FN662.5
June 5, 2006
Test Circuits
Input Resistance
Common-Emitter Configuration
VCE = 6V, IC = 1mA, f = 200 MHz
-
400
-
Output Resistance
-4.6
-
k
Input Capacitance
-3.7
-
pF
Output Capacitance
-2
-
pF
Magnitude of Forward Transadmittance
-
24
-
mS
NOTE:
3. When used as a zener for reference voltage, the device must not be subjected to more than 0.1mJ of energy from any possible capacitance or
electrostatic discharge in order to prevent degradation of the junction. Maximum operating zener current should be less than 10mA.
Electrical Specifications
TA = 25°C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
FIGURE 1. VOLTAGE-GAIN TEST CIRCUIT USING CURRENT-MIRROR BIASING FOR Q2
FIGURE 2. 100MHz POWER-GAIN AND NOISE-FIGURE TEST CIRCUIT
7
8
4
2
3
6
GEN
10k
BIAS-CURRENT
ADJ
V+
RL
470
0.01
1
µF
VO
Q2
0.01
µF
470pF
51
VI
Q3
0.01
1
µF
pF
µF
µF
470pF
1000
pF
NOTES:
4. This circuit was chosen because it conveniently
represents a close approximation in performance to a
properly unilateralized single transistor of this type. The
use of Q3 in a current-mirror configuration facilitates
simplified biasing. The use of the cascode circuit in no
way implies that the transistors cannot be used
individually.
5. E.F. Johnson number 160-104-1 or equivalent.
4
3
2
13
12
14
6
7
5
8
SHIELD
Q5
620
Q2
C1
1.8pF
0.3
µH
1000pF
VI
OHMITE
Z144
(NOTE 5)
Q3
25k
1000
pF
1000
pF
560
750
1%
1000
pF
8.2
k
0.47
µH
1.5 - 8pF
VO
+12V
C2
TEST
POINT
(NOTE 5)
CA3127
CA3127


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