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CA3096AM bảng dữ liệu(PDF) 2 Page - Intersil Corporation

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Giải thích chi tiết về linh kiện  NPN/PNP Transistor Arrays
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Absolute Maximum Ratings
Operating Conditions
NPN
PNP
Collector-to-Emitter Voltage, VCEO
CA3096, CA3096A . . . . . . . . . . . . . . . . . . . . . 35V
-40V
CA3096C . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V
-24V
Collector-to-Base Voltage, VCBO
CA3096, CA3096A . . . . . . . . . . . . . . . . . . . . . 45V
-40V
CA3096C . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
-24V
Collector-to-Substrate Voltage, VCIO (Note 1)
CA3096, CA3096A . . . . . . . . . . . . . . . . . . . . . 45V
-
CA3096C . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
-
Emitter-to-Substrate Voltage, VEIO
CA3096, CA3096A . . . . . . . . . . . . . . . . . . . . . . -
-40V
CA3096C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -
-24V
Emitter-to-Base Voltage, VEBO
CA3096, CA3096A . . . . . . . . . . . . . . . . . . . . . . 6V
-40V
CA3096C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
-24V
Collector Current, IC (All Types). . . . . . . . . . . . 50mA
-10mA
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
Thermal Information
Thermal Resistance (Typical, Note 2)
θ
JA (
oC/W)
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
110
SOIC Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
120
Maximum Power Dissipation (Each Transistor, Note 3) . . . . . 200mW
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor of the CA3096 is isolated from the substrate by an integral diode. The substrate (Terminal 16) must be
connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor
action.
2.
θ
JA is measured with the component mounted on an evaluation PC board in free air.
3. Care must be taken to avoid exceeding the maximum junction temperature. Use the total power dissipation (all transistors) and thermal
resistances to calculate the junction temperature.
Electrical Specifications
For Equipment Design, At TA = 25
oC
PARAMETER
TEST
CONDITIONS
CA3096
CA3096A
CA3096C
UNITS
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
DC CHARACTERISTICS FOR EACH NPN TRANSISTOR
ICBO
VCB = 10V,
IE = 0
-
0.001
100
-
0.001
40
-
0.001
100
nA
ICEO
VCE = 10V,
IB = 0
-
0.006
1000
-
0.006
100
-
0.006
1000
nA
V(BR)CEO
IC = 1mA, IB =
0
35
50
-
35
50
-
24
35
-
V
V(BR)CBO
IC = 10µA,
IE = 0
45
100
-
45
100
-
30
80
-
V
V(BR)CIO
ICI = 10µA,
IB = IE = 0
45
100
-
45
100
-
30
80
-
V
V(BR)EBO
IE = 10µA,
IC = 0
68
-
6
8
-
68
-
V
VZ
IZ = 10µA
6
7.9
9.8
6
7.9
9.8
6
7.9
9.8
V
VCE SAT
lC = 10mA,
IB = 1mA
-
0.24
0.7
-
0.24
0.5
-
0.24
0.7
V
VBE (Note 4)
IC = 1mA,
VCE = 5V
0.6
0.69
0.78
0.6
0.69
0.78
0.6
0.69
0.78
V
hFE (Note 4)
150
390
500
150
390
500
100
390
670
|
∆V
BE/∆T| (Note 4)
IC = 1mA,
VCE = 5V
-1.9
-
-
1.9-
-1.9
-
mV/oC
DC CHARACTERISTICS FOR EACH PNP TRANSISTOR
ICBO
VCB = -10V,
IE = 0
-
-0.06
-100
-
-0.006
-40
-
-0.06
-100
nA
CA3096, CA3096A, CA3096C


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