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CA3146E bảng dữ liệu(PDF) 2 Page - Intersil Corporation |
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CA3146E bảng dữ liệu(HTML) 2 Page - Intersil Corporation |
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2 / 12 page  2 Absolute Maximum Ratings Thermal Information Collector-to-Emitter Voltage (VCEO) CA3146A, CA3183A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V CA3146, CA3183 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector-to-Base Voltage (VCBO) CA3146A, CA3183A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CA3146, CA3183 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector-to-Substrate Voltage (VCIO, Note 1) CA3146A, CA3183A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CA3146, CA3183 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter to Base Voltage (VEBO) all types. . . . . . . . . . . . . . . . . . . . . 5V Collector Current CA3146A, CA3146 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA CA3183A, CA3183 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75mA Base Current (IB) - CA3183A, CA3183 . . . . . . . . . . . . . . . . . . . 20mA Operating Conditions Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC Thermal Resistance (Typical, Note 2) θ JA ( oC/W) 14 Ld PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . 100 14 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . 200 16 Ld PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . 95 16 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . 175 Maximum Power Dissipation (Any One Transistor, Note 3) CA3146A, CA3146. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW CA3183A, CA3183. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . 175oC Maximum Junction Temperature (Plastic Package). . . . . . . . . 150oC Maximum Storage Temperature Range (all types) . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300oC (SOIC - Lead Tips Only) CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. The collector of each transistor is isolated from the substrate by an integral diode. The substrate must be connected to a voltage which is more negative than any collector voltage in order to maintain isolation between transistors, and to provide for normal transistor action. To avoid undesired coupling between transistors, the substrate terminal should be maintained at either DC or signal (AC) ground. A suitable bypass capacitor can be used to establish a signal ground. 2. θJA is measured with the component mounted on an evaluation PC board in free air. 3. Care must be taken to avoid exceeding the maximum junction temperature. Use the total power dissipation (all transistors) and thermal resistances to calculate the junction temperature. Electrical Specifications CA3146 Series PARAMETER SYMBOL TEST CONDITIONS TYPICAL PERF. CURVE FIG. NO. CA3146 CA3146A UNITS TA = 25 oCMN TYP MAX MIN TYP MAX DC CHARACTERISTICS FOR EACH TRANSISTOR Collector-to-Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 - 40 72 - 50 72 - V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 - 30 56 - 40 56 - V Collector-to-Substrate Breakdown Voltage V(BR)CIO ICI = 10µA, IB = 0, IE = 0 - 40 72 - 50 72 - V Emitter-to-Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 - 5 7 - 5 7 - V Collector-Cutoff Current ICEO VCE = 10V, IB = 0 1 - See Curve 5- See Curve 5 µA Collector-Cutoff Current ICBO VCB = 10V, IE = 0 2 - 0.002 100 - 0.002 100 nA DC Forward-Current Transfer Ratio hFE VCE = 5V, IC = 10mA 3 -85 - -85 - - VCE = 5V, IC = 1mA 3 30 100 - 30 100 - - VCE = 5V, IC = 10µA 3 -90 - -90 - - Base-to-Emitter Voltage VBE VCE = 3V, IC = 1mA 4 0.63 0.73 0.83 0.63 0.73 0.83 V Collector-to-Emitter Saturation Voltage VCE SAT IC = 10mA, IB = 1mA 5 - 0.33 - - 0.33 - V DC CHARACTERISTICS FOR TRANSISTORS Q1 AND Q2 (As A Differential Amplifier) Magnitude of Input Offset Voltage |VBE1 - VBE2| |VIO|VCE = 5V, IE = 1mA 6, 7 - 0.48 5 - 0.48 5 mV Magnitude of Base-to-Emitter Temperature Coefficient VCE = 5V, IE = 1mA - - 1.9 - - 1.9 - mV/oC ∆V BE ∆T ---------------- CA3146, CA3146A, CA3183, CA3183A |
Số phần tương tự - CA3146E |
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