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FDD8580 bảng dữ liệu(PDF) 1 Page - Fairchild Semiconductor |
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FDD8580 bảng dữ liệu(HTML) 1 Page - Fairchild Semiconductor |
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1 / 6 page  tm July 2006 ©2006 Fairchild Semiconductor Corporation FDD8580/FDU8580 Rev. A www.fairchildsemi.com 1 FDD8580/FDU8580 N-Channel PowerTrench® MOSFET 20V, 35A, 9m Ω Features Max rDS(on) = 9mΩ at VGS = 10V, ID = 35A Max rDS(on) =13mΩ at VGS = 4.5V, ID = 33A Low gate charge: Qg(TOT) = 19nC(Typ), VGS = 10V Low gate resistance 100% Avalanche tested RoHS compliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Application Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture MOSFET Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage 20 V VGS Gate to Source Voltage ±20 V ID Drain Current -Continuous (Package Limited) 35 A -Continuous (Die Limited) 58 -Pulsed (Note 1) 159 EAS Single Pulse Avalanche Energy (Note 2) 66 mJ PD Power Dissipation 49.5 W TJ, TSTG Operating and Storage Temperature -55 to 175 °C RθJC Thermal Resistance, Junction to Case TO-252,TO-251 3.03 °C/W RθJA Thermal Resistance, Junction to Ambient TO-252,TO-251 100 °C/W RθJA Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area 52 °C/W Device Marking Device Package Reel Size Tape Width Quantity FDD8580 FDD8580 TO-252AA 13’’ 12mm 2500 units FDU8580 FDU8580 TO-251AA N/A(Tube) N/A 75 units I-PAK (TO-251AA) G DS D G S |
Số phần tương tự - FDD8580 |
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Mô tả tương tự - FDD8580 |
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