©2007 Fairchild Semiconductor Corporation

1

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FDD6N25 / FDU6N25 Rev. A

February 2007

UniFET

TM

FDD6N25 / FDU6N25

250V N-Channel MOSFET

Features

• Low gate charge ( typical 4.5 nC)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize

on-state

resistance,

provide

superior

switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies and active power factor

correction.

Absolute Maximum Ratings

Thermal Characteristics

D

G

S

I-PAK

FDU Series

D-PAK

FDD Series

G

S

D

G

S

D

Symbol

Parameter

FDD6N25 / FDU6N25

Unit

Drain-Source Voltage

250

V

Drain Current

4.4

2.6

A

A

Drain Current

- Pulsed

(Note 1)

18

A

Gate-Source voltage

±30

V

Single Pulsed Avalanche Energy

(Note 2)

45

mJ

Avalanche Current

(Note 1)

4.4

A

Repetitive Avalanche Energy

(Note 1)

5mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

Power Dissipation

- Derate above 25

°C

50

0.4

W

W/

°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

°C

Symbol

Parameter

Typ

Max

Unit

Thermal Resistance, Junction-to-Case

--

2.5

°C/W

Thermal Resistance, Junction-to-Ambient

--

110

°C/W