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NCV7356 bảng dữ liệu(PDF) 6 Page - ON Semiconductor |
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NCV7356 bảng dữ liệu(HTML) 6 Page - ON Semiconductor |
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6 / 24 page  NCV7356 http://onsemi.com 6 ELECTRICAL CHARACTERISTICS (VBAT = 5.0 to 27 V, TA = −40 to +125°C, unless otherwise specified.) Characteristic Symbol Condition Min Typ Max Unit GENERAL Undervoltage Lock Out VBATuv − 3.5 − 4.8 V Supply Current, Recessive, All Active Modes IBATN VBAT = 18 V, TxD Open Not High Speed Mode − 5.0 6.0 mA High Speed Mode − − 8.0 Normal Mode Supply Current, Dominant IBATN (Note 10) VBAT = 27 V, MODE0 = MODE1 = H, TxD = L, Rload = 200 W − 30 35 mA High−Speed Mode Supply Current, Dominant IBATN (Note 10) VBAT = 16 V, MODE0 = H, MODE1 = L, TxD = L, Rload = 75 W − 70 75 mA Wake−Up Mode Supply Current, Dominant IBATW (Note 10) VBAT = 27 V, MODE0 = L, MODE1 = H, TxD = L, Rload = 200 W − 60 75 mA Sleep Mode Supply Current (Note 9) IBATS VBAT = 13 V, TA = 85°C, TxD, RxD, MODE0, MODE1 Open − 30 60 mA Thermal Shutdown (Note 10) TSD − 155 − 180 °C Thermal Recovery (Note 10) TREC − 126 − 150 °C CANH Bus Output Voltage Voh RL > 200 W, Normal Mode 6.0 V < VBAT < 27 V 4.4 − 5.1 V Bus Output Voltage Low Battery Voh RL > 200 W, Normal High−Speed Mode 5.0 V < VBAT < 6.0 V 3.4 − 5.1 V Bus Output Voltage High−Speed Mode Voh RL > 75 W, High−Speed Mode 8.0 V < VBAT < 16 V 4.2 − 5.1 V HV Fixed Wake−Up Output High Voltage VohWuFix Wake−Up Mode, RL > 200 W, 11.4 V < VBAT < 27 V 9.9 − 12.5 V HV Offset Wake−Up Output High Voltage VohWuOffset Wake−Up Mode, RL > 200 W, 5.0 V < VBAT < 11.4 V VBAT –1.5 − VBAT V Recessive State Output Voltage Vol Recessive State or Sleep Mode, Rload = 6.5 kW −0.20 − 0.20 V Bus Short Circuit Current −ICAN_SHORT VCANH = 0 V, VBAT = 27 V, TxD = 0 V 50 − 350 mA Bus Leakage Current During Loss of Ground ILKN_CAN (Note 11) Loss of Ground, VCANH = 0 V −50 − 10 mA Bus Leakage Current, Bus Positive ILKP_CAN TxD High −10 − 10 mA Bus Input Threshold Vih Normal, High−Speed Mode, HVWU 6.0 v VBAT v 27 V 2.0 2.1 2.2 V Bus Input Threshold Low Battery Vihlb Normal, VBAT = 5.0 V to 6.0 V 1.6 1.7 2.2 V Fixed Wake−Up from Sleep Input High Voltage Threshold VihWuFix (Note 10) Sleep Mode, VBAT > 10.9 V 6.6 − 7.9 V Offset Wake−Up from Sleep Input High Voltage Threshold VihWuOffset (Note 10) Sleep Mode VBAT −4.3 − VBAT −3.25 V LOAD Voltage on Switched Ground Pin VLOAD_1mA ILOAD = 1.0 mA − − 0.1 V Voltage on Switched Ground Pin VLOAD ILOAD = 5.0 mA − − 0.5 V Voltage on Switched Ground Pin VLOAD_LOB ILOAD = 7.0 mA, VBAT = 0 V − − 1.0 V Load Resistance During Loss of Battery RLOAD_LOB VBAT = 0 RLOAD −10% − RLOAD +35% W 9. Characterization data supports IBATS < 65 mA with conditions VBAT = 18 V, TA = 125°C 10. Thresholds not tested in production, guaranteed by design. 11. Leakage current in case of loss of ground is the summary of both currents ILKN_CAN and ILKN_LOAD. |
Số phần tương tự - NCV7356_07 |
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Mô tả tương tự - NCV7356_07 |
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