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BYV26C bảng dữ liệu(PDF) 3 Page - NXP Semiconductors |
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BYV26C bảng dữ liệu(HTML) 3 Page - NXP Semiconductors |
3 / 12 page 1996 May 30 3 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV26 series ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. IFRM repetitive peak forward current Tamb =60 °C; see Figs 8 and 9 BYV26A to E − 6.0 A BYV26F and G − 6.4 A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj =Tj max prior to surge; VR =VRRMmax − 30 A ERSM non-repetitive peak reverse avalanche energy IR = 400 mA; Tj =Tj max prior to surge; inductive load switched off − 10 mJ Tstg storage temperature −65 +175 °C Tj junction temperature see Figs 12 and 13 −65 +175 °C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 1 A; Tj =Tj max; see Figs 14 and 15 BYV26A to E −− 1.3 V BYV26F and G −− 1.3 V VF forward voltage IF =1A; see Figs 14 and 15 BYV26A to E −− 2.50 V BYV26F and G −− 2.15 V V(BR)R reverse avalanche breakdown voltage IR = 0.1 mA BYV26A 300 −− V BYV26B 500 −− V BYV26C 700 −− V BYV26D 900 −− V BYV26E 1100 −− V BYV26F 1300 −− V BYV26G 1500 −− V IR reverse current VR =VRRMmax; see Fig.16 −− 5 µA VR =VRRMmax; Tj = 165 °C; see Fig.16 −− 150 µA trr reverse recovery time when switched from IF = 0.5 A to IR =1A; measured at IR = 0.25 A; see Fig.20 BYV26A to C −− 30 ns BYV26D and E −− 75 ns BYV26F and G −− 150 ns Cd diode capacitance f = 1 MHz; VR =0V; see Figs 17 and 18 BYV26A to C − 45 − pF BYV26D and E − 40 − pF BYV26F and G − 35 − pF SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT |
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