BYV2100 datasheet(3/8 Pages) PHILIPS

tên linh kiện	BYV2100

Giải thích chi tiết về linh kiện	Fast soft-recovery controlled avalanche rectifier

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nhà sản xuất	PHILIPS [NXP Semiconductors]

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3 / 8 page

1996 Oct 07

3

Philips Semiconductors

Product speciﬁcation

Fast soft-recovery

controlled avalanche rectiﬁer

BYV2100

ELECTRICAL CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

THERMAL CHARACTERISTICS

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer

≥40 µm, see Fig.12.

For more information please refer to the

“General Part of associated Handbook”.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VF

forward voltage

IF = 2 A; Tj =Tj max; see Fig.5

−−

0.78

V

IF = 2 A; see Fig.5

−−

0.98

V

V(BR)R

reverse avalanche

breakdown voltage

IR = 0.1 mA

120

−−

V

IR

reverse current

VR =VRRMmax;

see Fig.8

−−

5

µA

VR =VRRMmax; Tj = 165 °C;

see Fig.8

−−

150

µA

trr

reverse recovery time

when switched from IF = 0.5 A

to IR = 1 A; measured at

IR = 0.25 A; see Fig.10

−−

12.5

ns

Cd

diode capacitance

f = 1 MHz; VR = 0 V; see Fig.9

−

135

−

pF

maximum slope of reverse

recovery current

when switched from

IF = 1 A to VR ≥ 30 V and

dIF/dt = −1A/µs; see Fig.11

−−

2A/

µs

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

lead length = 10 mm

46

K/W

Rth j-a

thermal resistance from junction to ambient

note 1

100

K/W

dI

R

dt

--------

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