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BYV118X-35 bảng dữ liệu(PDF) 1 Page - NXP Semiconductors

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Giải thích chi tiết về linh kiện  Rectifier diodes Schottky barrier
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BYV118X-35 bảng dữ liệu(HTML) 1 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Rectifier diodes
BYV118F, BYV118X series
Schottky barrier
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching
V
R = 35 V/ 40 V/ 45 V
• Reverse surge capability
• High thermal cycling performance
I
O(AV) = 10 A
• Isolated package
V
F ≤ 0.6 V
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended
for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The BYV118F series is supplied in the SOT186 package.
The BYV118X series is supplied in the SOT186A package.
PINNING
SOT186
SOT186A
PIN
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
3
anode 2 (a)
tab
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYV118F-
35
40
45
BYV118X-
35
40
45
V
RRM
Peak repetitive reverse
-
35
40
45
V
voltage
V
RWM
Working peak reverse
-
35
40
45
V
voltage
V
R
Continuous reverse voltage
T
hs ≤ 97 ˚C
-
35
40
45
V
I
O(AV)
Average rectified output
square wave;
δ = 0.5;
-
10
A
current (both diodes
T
hs ≤ 107 ˚C
conducting)
I
FRM
Repetitive peak forward
square wave;
δ = 0.5;
-
10
A
current per diode
T
hs ≤ 107 ˚C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
100
A
current per diode
t = 8.3 ms
-
110
A
sinusoidal; T
j = 125 ˚C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
pulse width and repetition rate
-
1
A
surge current per diode
limited by T
j max
T
j
Operating junction
-
150
˚C
temperature
T
stg
Storage temperature
- 65
175
˚C
k
a1
a2
13
2
12 3
case
12 3
case
May 1998
1
Rev 1.100


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