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BYV118X-35 bảng dữ liệu(PDF) 1 Page - NXP Semiconductors |
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BYV118X-35 bảng dữ liệu(HTML) 1 Page - NXP Semiconductors |
1 / 6 page Philips Semiconductors Product specification Rectifier diodes BYV118F, BYV118X series Schottky barrier FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop • Fast switching V R = 35 V/ 40 V/ 45 V • Reverse surge capability • High thermal cycling performance I O(AV) = 10 A • Isolated package V F ≤ 0.6 V GENERAL DESCRIPTION Dual, common cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The BYV118F series is supplied in the SOT186 package. The BYV118X series is supplied in the SOT186A package. PINNING SOT186 SOT186A PIN DESCRIPTION 1 anode 1 (a) 2 cathode (k) 3 anode 2 (a) tab isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT BYV118F- 35 40 45 BYV118X- 35 40 45 V RRM Peak repetitive reverse - 35 40 45 V voltage V RWM Working peak reverse - 35 40 45 V voltage V R Continuous reverse voltage T hs ≤ 97 ˚C - 35 40 45 V I O(AV) Average rectified output square wave; δ = 0.5; - 10 A current (both diodes T hs ≤ 107 ˚C conducting) I FRM Repetitive peak forward square wave; δ = 0.5; - 10 A current per diode T hs ≤ 107 ˚C I FSM Non-repetitive peak forward t = 10 ms - 100 A current per diode t = 8.3 ms - 110 A sinusoidal; T j = 125 ˚C prior to surge; with reapplied V RRM(max) I RRM Peak repetitive reverse pulse width and repetition rate - 1 A surge current per diode limited by T j max T j Operating junction - 150 ˚C temperature T stg Storage temperature - 65 175 ˚C k a1 a2 13 2 12 3 case 12 3 case May 1998 1 Rev 1.100 |
Số phần tương tự - BYV118X-35 |
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Mô tả tương tự - BYV118X-35 |
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