Philips Semiconductors

Product specification

Rectifier diodes

BYV118F, BYV118X series

Schottky barrier

ISOLATION LIMITING VALUE & CHARACTERISTIC

T

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

V

isol

Peak isolation voltage from

SOT186 package; R.H.

≤ 65%; clean and

-

-

1500

V

all terminals to external

dustfree

heatsink

V

isol

R.M.S. isolation voltage from SOT186A package; f = 50-60 Hz;

-

-

2500

V

all terminals to external

sinusoidal waveform; R.H.

≤ 65%; clean

heatsink

and dustfree

C

isol

Capacitance from pin 2 to

f = 1 MHz

-

10

-

pF

external heatsink

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

R

th j-hs

Thermal resistance junction

per diode

-

-

6.5

K/W

to heatsink

both diodes

-

-

5.5

K/W

(with heatsink compound)

R

th j-a

Thermal resistance junction

in free air

-

55

-

K/W

to ambient

ELECTRICAL CHARACTERISTICS

T

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

V

F

Forward voltage

I

-

0.52

0.6

V

I

-

0.72

0.87

V

I

R

Reverse current

V

-

0.06

0.5

mA

V

-

6

15

mA

C

d

Junction capacitance

V

-

155

-

pF

May 1998

2

Rev 1.100