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MC33365P bảng dữ liệu(PDF) 5 Page - ON Semiconductor

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Giải thích chi tiết về linh kiện  High Voltage Switching Regulator
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nhà sản xuất  ONSEMI [ON Semiconductor]
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MC33365
http://onsemi.com
5
1.0
160
0
2.0
0
−50
32
0
0
VDS, DRAIN−SOURCE VOLTAGE (V)
VCC = 20 V
TA = 25°C
VCC, POWER SUPPLY VOLTAGE (V)
VPin 1 = 400 V
TA = 25°C
VCC, SUPPLY VOLTAGE (V)
TA, AMBIENT TEMPERATURE (°C)
ID = 200 mA
Figure 10. Regulator Output Voltage
Change versus Source Current
Ireg, REGULATOR SOURCE CURRENT (mA)
Figure 11. Peak Startup Current
versus Power Supply Voltage
VCC = 20 V
RT = 10 k
CPin 8 = 1.0 μF
TA = 25°C
Figure 12. Power Switch Drain−Source
On−Resistance versus Temperature
Figure 13. Power Switch
Drain−Source Capacitance versus Voltage
Figure 14. Supply Current versus Supply Voltage
Pulse tested with an on−time of 20
μs to 300 μs
at < 1.0% duty cycle. The on−time is adjusted at
Pin 1 for a maximum peak current out of Pin 3.
Pulse tested at 5.0 ms with < 1.0% duty cycle
so that TJ is as close to TA as possible.
COSS measured at 1.0 MHz with 50 mVpp.
RT = 10 k
Pin 1 = Open
Pin 4, 5, 10, 11,
12, 13 = Gnd
TA = 25°C
−20
−40
−60
−80
24
16
8.0
0
2.4
1.6
0.8
0
1.0
0
120
40
80
0
4.0
8.0
12
16
20
2.0
4.0
6.0
8.0
10
12
14
−25
0
25
50
75
150
100
10
100
1000
10
20
30
40
125
0.01
100
t, TIME (s)
Figure 15. P Suffix Transient Thermal
Resistance
0.1
1.0
10
100
10
1.0
L = 12.7 mm of 2.0 oz. copper.
Refer to Figure 15.
3.2
CT = 2.0 nF
CT = 390 pF


Số phần tương tự - MC33365P

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