công cụ tìm kiếm bảng dữ liệu linh kiện điện tử
  Vietnamese  ▼
ALLDATASHEET.VN

X  

MC33363BDWR2G bảng dữ liệu(PDF) 10 Page - ON Semiconductor

tên linh kiện MC33363BDWR2G
Giải thích chi tiết về linh kiện  High Voltage Switching Regulator
Download  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
nhà sản xuất  ONSEMI [ON Semiconductor]
Trang chủ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC33363BDWR2G bảng dữ liệu(HTML) 10 Page - ON Semiconductor

Back Button MC33363BDWR2G Datasheet HTML 3Page - ON Semiconductor MC33363BDWR2G Datasheet HTML 4Page - ON Semiconductor MC33363BDWR2G Datasheet HTML 5Page - ON Semiconductor MC33363BDWR2G Datasheet HTML 6Page - ON Semiconductor MC33363BDWR2G Datasheet HTML 7Page - ON Semiconductor MC33363BDWR2G Datasheet HTML 8Page - ON Semiconductor MC33363BDWR2G Datasheet HTML 9Page - ON Semiconductor MC33363BDWR2G Datasheet HTML 10Page - ON Semiconductor MC33363BDWR2G Datasheet HTML 11Page - ON Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 10 / 11 page
background image
MC33363B
http://onsemi.com
10
The Power Switch is designed to directly drive the converter
transformer and is capable of switching a maximum of 700 V
and 1.0 A. Proper device voltage snubbing and heatsinking
are required for reliable operation.
A Leading Edge Blanking circuit was placed in the current
sensing signal path. This circuit prevents a premature reset of
the PWM Latch. The premature reset is generated each time
the Power Switch is driven into conduction. It appears as a
narrow voltage spike across the current sense resistor, and is
due to the MOSFET gate to source capacitance, transformer
interwinding capacitance, and output rectifier recovery time.
The Leading Edge Blanking circuit has a dynamic behavior
in that it masks the current signal until the Power Switch
turn−on
transition
is
completed.
The
current
limit
propagation delay time is typically 262 ns. This time is
measured from when an overcurrent appears at the Power
Switch drain, to the beginning of turn−off.
Error Amplifier
An fully compensated Error Amplifier with access to the
inverting input and output is provided for primary side
voltage sensing, Figure 19. It features a typical dc voltage
gain of 82 dB, and a unity gain bandwidth of 1.0 MHz with
78 degrees of phase margin, Figure 6. The noninverting input
is internally biased at 2.6 V
±3.1% and is not pinned out. The
Error Amplifier output is pinned out for external loop
compensation and as a means for directly driving the PWM
Comparator. The output was designed with a limited sink
current capability of 270
mA, allowing it to be easily
overridden with a pullup resistor. This is desirable in
applications that require secondary side voltage sensing.
Overvoltage Protection
An Overvoltage Protection Comparator is included to
eliminate the possibility of runaway output voltage. This
condition can occur if the control loop feedback signal path
is broken due to an external component or connection failure.
The comparator is normally used to monitor the primary side
VCC voltage. When the 2.6 V threshold is exceeded, it will
immediately turn off the Power Switch, and protect the load
from a severe overvoltage condition. This input can also be
driven from external circuitry to inhibit converter operation.
Undervoltage Lockout
An
Undervoltage
Lockout
comparator
has
been
incorporated to guarantee that the integrated circuit has
sufficient voltage to be fully functional before the output
stage is enabled. The UVLO comparator monitors the VCC
voltage at Pin 3 and when it exceeds 14.5 V, the reset signal
is removed from the PWM Latch allowing operation of the
Power Switch. To prevent erratic switching as the threshold
is crossed, 5.0 V of hysteresis is provided.
Startup Control
An internal Startup Control circuit with a high voltage
enhancement mode MOSFET is included within the
MC33363B. This circuitry allows for increased converter
efficiency by eliminating the external startup resistor, and its
associated power dissipation, commonly used in most
off−line converters that utilize a UC3842 type of controller.
Rectified ac line voltage is applied to the Startup Input, Pin 1.
This causes the MOSFET to enhance and supply internal bias
as well as charge current to the VCC bypass capacitor that
connects from Pin 3 to ground. When VCC reaches the UVLO
upper threshold of 15.2 V, the IC commences operation and
the startup MOSFET is turned off. Operating bias is now
derived from the auxiliary transformer winding, and all of the
device power is efficiently converted down from the rectified
ac line.
The startup MOSFET will provide a steady current of
1.7 mA, Figure 11, as VCC increases or shorted to ground.
The startup MOSFET is rated at a maximum of 400 V with
VCC shorted to ground, and 500 V when charging a VCC
capacitor of 1000
mF or less.
Output Short−Circuit Condition
When the output is short−circuited, the VCC is powered by
the internal startup circuit instead of the VCC auxiliary
winding. The internal startup circuit turns on and charges up
VCC voltage when VCC reaches its UVLO lower threshold of
9.5V. It turns off and VCC voltage drops when VCC reaches
its UVLO upper threshold of 15.2V. The device only delivers
drain current for the time when VCC goes from 15.2V to 9.5V.
No drain current is delivered when VCC goes from 9.5V to
15.2V. As a result, some of the switching cycle is missed as
shown in Figure 20. The drain current limit is limited by the
cycle−by−cycle current limit.
Regulator
A low current 6.5 V regulated output is available for
biasing the Error Amplifier and any additional control system
circuitry. It is capable of up to 10 mA and has short−circuit
protection. This output requires an external bypass capacitor
of at least 1.0
mF for stability.
Thermal Shutdown and Package
Internal thermal circuitry is provided to protect the Power
Switch in the event that the maximum junction temperature
is exceeded. When activated, typically at 135
°C, the Latch is
forced into a ‘reset’ state, disabling the Power Switch. The
Latch is allowed to ‘set’ when the Power Switch temperature
falls below 105
°C. This feature is provided to prevent
catastrophic failures from accidental device overheating. It is
not intended to be used as a substitute for proper heatsinking.
The MC33363B is contained in a heatsinkable plastic
dual−in−line package in which the die is mounted on a special
heat tab copper alloy lead frame. This tab consists of the four
center ground pins that are specifically designed to improve
thermal conduction from the die to the circuit board. Figures
16 and 17 show a simple and effective method of utilizing the
printed circuit board medium as a heat dissipater by soldering
these pins to an adequate area of copper foil. This permits the
use of standard layout and mounting practices while having
the ability to halve the junction to air thermal resistance. The
examples are for a symmetrical layout on a single−sided
board with two ounce per square foot of copper.


Số phần tương tự - MC33363BDWR2G

nhà sản xuấttên linh kiệnbảng dữ liệuGiải thích chi tiết về linh kiện
logo
ON Semiconductor
MC33363BDWR2G ONSEMI-MC33363BDWR2G Datasheet
211Kb / 11P
   High Voltage Switching Regulator
February, 2015 ??Rev. 11
More results

Mô tả tương tự - MC33363BDWR2G

nhà sản xuấttên linh kiệnbảng dữ liệuGiải thích chi tiết về linh kiện
logo
ON Semiconductor
MC33363B ONSEMI-MC33363B_15 Datasheet
211Kb / 11P
   High Voltage Switching Regulator
February, 2015 ??Rev. 11
MC33365 ONSEMI-MC33365_06 Datasheet
363Kb / 11P
   High Voltage Switching Regulator
July, 2006??Rev. 4
MC33363A ONSEMI-MC33363A_10 Datasheet
559Kb / 13P
   High Voltage Switching Regulator
November, 2010 -- Rev. 8
MC33363B ONSEMI-MC33363B_10 Datasheet
328Kb / 11P
   High Voltage Switching Regulator
November, 2010 -- Rev. 9
MC33362 ONSEMI-MC33362_06 Datasheet
445Kb / 14P
   High Voltage Switching Regulator
April, 2005 ??Rev. 6
MC33363A ONSEMI-MC33363A_05 Datasheet
258Kb / 14P
   High Voltage Switching Regulator
November, 2005 ??Rev. 5
MC33363 ONSEMI-MC33363_06 Datasheet
489Kb / 14P
   High Voltage Switching Regulator
July, 2006 ??Rev. 7
MC33363A ONSEMI-MC33363A_15 Datasheet
262Kb / 13P
   High Voltage Switching Regulator
February, 2015 ??Rev. 10
logo
Toshiba Semiconductor
2SC5562 TOSHIBA-2SC5562_04 Datasheet
102Kb / 3P
   Switching Regulator and High-Voltage Switching
2SC5684 TOSHIBA-2SC5684_04 Datasheet
123Kb / 3P
   Switching Regulator and High-Voltage Switching
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11


bảng dữ liệu tải về

Go To PDF Page


Link URL




Chính sách bảo mật
ALLDATASHEET.VN
Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không?  [ DONATE ] 

Alldatasheet là   |   Quảng cáo   |   Liên lạc với chúng tôi   |   Chính sách bảo mật   |   Trao đổi link   |   Tìm kiếm theo nhà sản xuất
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com