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MC100EPT23MNR4G bảng dữ liệu(PDF) 3 Page - ON Semiconductor

tên linh kiện MC100EPT23MNR4G
Giải thích chi tiết về linh kiện  3.3V Dual Differential LVPECL/LVDS/CML to LVTTL/LVCMOS Translator
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MC100EPT23
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Table 4. PECL DC CHARACTERISTICS VCC = 3.3 V, GND = 0 V (Note 2)
Symbol
Characteristic
−40
°C
25
°C
85
°C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
ICCH
Power Supply Current (Outputs set to HIGH)
10
18
25
10
18
25
10
18
25
mA
ICCL
Power Supply Current (Outputs set to LOW)
15
26
36
15
26
36
15
26
36
mA
VIH
Input HIGH Voltage
2075
2420
2075
2420
2075
2420
mV
VIL
Input LOW Voltage
1355
1675
1355
1675
1355
1675
mV
VIHCMR
Input HIGH Voltage Common Mode Range
(Note 3)
1.2
3.3
1.2
3.3
1.2
3.3
V
IIH
Input HIGH Current
150
150
150
mA
IIL
Input LOW Current
D
D
−150
−150
−150
−150
−150
−150
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
2. All values vary 1:1 with VCC.
3. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential
input signal.
Table 5. LVTTL/LVCMOS OUTPUT DC CHARACTERISTICS VCC = 3.3 V, GND = 0.0 V, TA = −40°C to 85°C
Symbol
Characteristic
Condition
Min
Typ
Max
Unit
VOH
Output HIGH Voltage
IOH = −3.0 mA
2.4
V
VOL
Output LOW Voltage
IOL = 24 mA
0.5
V
IOS
Output Short Circuit Current
−180
−50
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
Table 6. AC CHARACTERISTICS VCC = 3.0 V to 3.6 V, GND = 0.0 V (Note 4)
Symbol
Characteristic
−40
°C
25
°C
85
°C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
fmax
Maximum Frequency (Figure 2)
275
350
275
350
275
350
MHz
tPLH,
tPHL
Propagation Delay to
Output Differential (Note 5)
1.2
1.2
1.5
1.5
1.8
1.8
1.2
1.1
1.5
1.5
1.8
1.8
1.3
1.1
1.7
1.5
2.4
1.8
ns
tSK+ +
tSK− −
tSKPP
Output−to−Output Skew++
Output−to−Output Skew−−
Part−to−Part Skew (Note 6)
15
35
70
60
80
500
15
40
70
70
80
500
30
40
140
125
80
500
ps
tJITTER
Random Clock Jitter (RMS) (Figure 2)
5
10
5
10
5
10
ps
VPP
Input Voltage Swing (Differential Configuration)
150
800
1200
150
800
1200
150
800
1200
mV
tr tf
Output Rise/Fall Times (0.8 V − 2.0 V)
Q, Q
330
600
900
330
600
900
330
650
900
ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
4. Measured with a 750 mV 50% duty−cycle clock source. RL = 500 W to GND and CL = 20 pF to GND. Refer to Figure 3.
5. Reference (VCC = 3.3V ± 5%; GND = 0 V)
6. Skews are measured between outputs under identical conditions.


Số phần tương tự - MC100EPT23MNR4G

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   3.3 V Dual Differential LVPECL/LVDS/CML to LVTTL/LVCMOS Translator
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