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Giải thích chi tiết về linh kiện  Analog Multiplexer/Demultiplexer High?뭁erformance Silicon?묰ate CMOS
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MC74LVXT4051
http://onsemi.com
3
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VEE
Negative DC Supply Voltage
(Referenced to GND)
*7.0 to )0.5
V
VCC
Positive DC Supply Voltage
(Referenced to GND)
(Referenced to VEE)
*0.5 to )7.0
*0.5 to )7.0
V
VIS
Analog Input Voltage
VEE
*0.5 to V
CC )0.5
V
VIN
Digital Input Voltage
(Referenced to GND)
*0.5 to 7.0
V
I
DC Current, Into or Out of Any Pin
$20
mA
TSTG
Storage Temperature Range
*65 to )150
_C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
260
_C
TJ
Junction Temperature under Bias
)150
_C
qJA
Thermal Resistance
SOIC
TSSOP
143
164
°C/W
PD
Power Dissipation in Still Air,
SOIC
TSSOP
500
450
mW
MSL
Moisture Sensitivity
Level 1
FR
Flammability Rating
Oxygen Index: 30% − 35%
UL 94−V0 @ 0.125 in
VESD
ESD Withstand Voltage
Human Body Model (Note 1)
Machine Model (Note 2)
Charged Device Model (Note 3)
u2000
u200
u1000
V
ILATCHUP
Latchup Performance
Above VCC and Below GND at 125°C (Note 4)
$300
mA
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Tested to EIA/JESD22−A114−A.
2. Tested to EIA/JESD22−A115−A.
3. Tested to JESD22−C101−A.
4. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VEE
Negative DC Supply Voltage
(Referenced to GND)
*6.0
GND
V
VCC
Positive DC Supply Voltage
(Referenced to GND)
(Referenced to VEE)
2.5
2.5
6.0
6.0
V
VIS
Analog Input Voltage
VEE
VCC
V
VIN
Digital Input Voltage
(Note 5) (Referenced to GND)
0
6.0
V
TA
Operating Temperature Range, All Package Types
*55
125
_C
tr, tf
Input Rise/Fall Time
VCC = 3.0 V $ 0.3 V
(Channel Select or Enable Inputs)
VCC = 5.0 V $ 0.5 V
0
0
100
20
ns/V
5. Unused inputs may not be left open. All inputs must be tied to a high−logic voltage level or a low−logic input voltage level.
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature
°C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
1
1
10
100
1000
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time Junction Temperature
TIME, YEARS


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