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MC74HCT574ADTR2G bảng dữ liệu(PDF) 3 Page - ON Semiconductor

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Giải thích chi tiết về linh kiện  Octal 3?뭆tate Noninverting D Flip?묯lop with LSTTL?묬ompatible Inputs
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nhà sản xuất  ONSEMI [ON Semiconductor]
Trang chủ  http://www.onsemi.com
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MC74HCT574A
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3
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
Vin
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Vout
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Iin
DC Input Current, per Pin
± 20
mA
Iout
DC Output Current, per Pin
± 35
mA
ICC
DC Supply Current, VCC and GND Pins
± 75
mA
PD
Power Dissipation in Still Air,
Plastic DIP†
SOIC Package†
750
500
mW
Tstg
Storage Temperature
– 65 to + 150
_C
TL
Lead Temperature, 1 mm from Case for 10 secs
(Plastic DIP or SOIC Package)
260
_C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings
applied to the device are individual stress limit values (not normal operating conditions) and are
not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
†Derating − Plastic DIP: – 10 mW/
_C from 65_ to 125_C
− SOIC Package: – 7 mW/
_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
DC Supply Voltage (Referenced to GND)
4.5
5.5
V
Vin, Vout
DC Input Voltage, Output Voltage
(Referenced to GND)
0
VCC
V
TA
Operating Temperature, All Package Types
– 55
+ 125
_C
tr, tf
Input Rise and Fall Time (Figure 3)
0
500
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Symbol
Parameter
Test Conditions
VCC
V
Guaranteed Limit
Unit
– 55 to
25
_C
v 85_C
v 125_C
VIH
Minimum High−Level Input Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout| v 20 mA
4.5
5.5
2.0
2.0
2.0
2.0
2.0
2.0
V
VIL
Maximum Low−Level Input Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout| v 20 mA
4.5
5.5
0.8
0.8
0.8
0.8
0.8
0.8
V
VOH
Minimum High−Level Output Voltage
Vin = VIH or VIL
|Iout| v 20 mA
4.5
5.5
4.4
5.4
4.4
5.4
4.4
5.4
Vin = VIH or VIL
|Iout| v 6.0 mA
4.5
3.98
3.84
3.7
V
VOL
Maximum Low−Level Output Voltage
Vin = VIH or VIL
|Iout| v 20 mA
4.5
5.5
0.1
0.1
0.1
0.1
0.1
0.1
Vin = VIH or VIL
|Iout| v 6.0 mA
4.5
0.26
0.33
0.4
Iin
Maximum Input Leakage Current
Vin = VCC or GND
5.5
± 0.1
± 1.0
± 1.0
mA
ICC
Maximum Quiescent Supply Current
(per Package)
Vin = VCC or GND
Iout = 0 mA
5.5
4.0
40
160
mA
IOZ
Maximum Three−State Leakage
Current
Vin = VIL or VIH (Note 1)
Vout = VCC or GND
5.5
− 0.5
– 5.0
– 10
mA
DICC
Additional Quiescent Supply Current
Vin = 2.4 V, Any One Input
Vin = VCC or GND, Other Inputs
lout = 0 mA
5.5
≥ – 55_C
25
_C to 125_C
mA
2.9
2.4
1. Output in high−impedance state.
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND
v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.


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