BUK854-800A datasheet(1/7 Pages) PHILIPS

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Product Specification

Insulated Gate Bipolar Transistor (IGBT)

BUK854-800A

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Fast-switching N-channel insulated

SYMBOL

PARAMETER

MAX.

UNIT

gate bipolar power transistor in a

plastic envelope.

V

CE

Collector-emitter voltage

800

V

The device is intended for use in

I

C

Collector current (DC)

12

A

motor control, DC/DC and AC/DC

P

tot

Total power dissipation

85

W

converters, and in general purpose

V

CEsat

Collector-emitter on-state voltage

3.5

V

high frequency switching

E

off

Turn-off Energy Loss

0.5

mJ

applications.

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

DESCRIPTION

1

gate

2

collector

3

emitter

tab

collector

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

CE

Collector-emitter voltage

-

-5

800

V

CGR

Collector-gate voltage

R

GE = 20 kΩ

-

800

V

±V

GE

Gate-emitter voltage

-

30

V

I

C

Collector current (DC)

T

mb =

25 ˚C

-

12

A

I

C

Collector current (DC)

T

mb = 100 ˚C

-

6

A

I

CLM

Collector Current (Clamped

T

j ≤ Tjmax.

-20

A

Inductive Load)

V

CL ≤ 500 V

I

CM

Collector current (pulsed peak value, T

j ≤ Tjmax.

-30

A

on-state)

P

tot

Total power dissipation

T

mb =

25 ˚C

-

85

W

T

stg

Storage temperature

-

- 55

150

˚C

T

j

Junction Temperature

-

150

˚C

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

R

th j-mb

Junction to mounting base

-

1.47

K/W

R

th j-a

Junction to ambient

In free air

60

-

K/W

12 3

tab

c

g

e

October 1994

1

Rev.1.100

Số phần tương tự - BUK854-800A

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
NXP Semiconductors	BUK854-800A	60Kb / 7P	Insulated Gate Bipolar Transistor IGBT October 1994 Rev.1.100

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Mô tả tương tự - BUK854-800A

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
NXP Semiconductors	BUK854-800A	60Kb / 7P	Insulated Gate Bipolar Transistor IGBT October 1994 Rev.1.100
ON Semiconductor	NGTB30N60IHLWG	180Kb / 10P	Insulated Gate Bipolar Transistor (IGBT) November, 2012 ??Rev. 0
ON Semiconductor	NGTG30N60FLWG	174Kb / 9P	Insulated Gate Bipolar Transistor (IGBT) January, 2013 ??Rev. 1
NXP Semiconductors	BUK856-800A	60Kb / 7P	Insulated Gate Bipolar Transistor IGBT March 1993 Rev 1.000
ON Semiconductor	NGTB30N60FLWG	182Kb / 10P	Insulated Gate Bipolar Transistor (IGBT) December, 2012 ??Rev. 0
	NGTB40N60IHLWG	184Kb / 10P	Insulated Gate Bipolar Transistor (IGBT) November, 2012 ??Rev. 0
	NGTB50N60FWG	183Kb / 10P	Insulated Gate Bipolar Transistor (IGBT) December, 2012 ??Rev. 1
	NGTG50N60FWG	176Kb / 9P	Insulated Gate Bipolar Transistor (IGBT) December, 2012 ??Rev. 0
	NGTB30N60FWG	182Kb / 10P	Insulated Gate Bipolar Transistor (IGBT) December, 2012 ??Rev. 1
	NGTB50N60FLWG	187Kb / 10P	Insulated Gate Bipolar Transistor (IGBT) January, 2013 ??Rev. 1
	NGTG30N60FWG	175Kb / 9P	Insulated Gate Bipolar Transistor (IGBT) December, 2012 ??Rev. 0

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