BUK78150-55 datasheet(1/9 Pages) PHILIPS

tên linh kiện	BUK78150-55

Giải thích chi tiết về linh kiện	TrenchMOS transistor Standard level FET

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Philips Semiconductors

Product specification

TrenchMOS

™ transistor

BUK78150-55

Standard level FET

GENERAL DESCRIPTION

QUICK REFERENCE DATA

N-channel enhancement mode logic

SYMBOL

PARAMETER

MAX.

UNIT

level field-effect power transistor in a

plastic envelope suitable for surface

V

DS

Drain-source voltage

55

V

mounting. Using ’trench’ technology

I

D

Drain current

5.5

A

the device features very low on-state

P

tot

Total power dissipation

1.8

W

resistance and has integral zener

T

j

Junction temperature

150

˚C

diodes giving ESD protection. It is

R

DS(ON)

Drain-source on-state

150

m

Ω

intended for use in automotive and

resistance

V

GS = 10 V

general

purpose

switching

applications.

PINNING - SOT223

PIN CONFIGURATION

SYMBOL

DESCRIPTION

1

gate

2

drain

3

source

4

drain (tab)

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

DS

Drain-source voltage

-

55

V

DGR

Drain-gate voltage

R

GS = 20 kΩ

-55

V

±V

GS

Gate-source voltage

-

16

V

I

D

Drain current (DC)

T

sp = 25 ˚C

-

5.5

A

I

D

Drain current (DC)

On PCB in Fig.19

-

2.6

A

T

amb = 25 ˚C

I

D

Drain current (DC)

On PCB in Fig.19

-

1.6

A

T

amb = 100 ˚C

I

DM

Drain current (pulse peak value)

T

sp = 25 ˚C

-

30

A

P

tot

Total power dissipation

T

sp = 25 ˚C

-

8.3

W

P

tot

Total power dissipation

On PCB in Fig.19

-

1.8

W

T

amb = 25 ˚C

T

stg, Tj

Storage & operating temperature

-

- 55

150

˚C

ESD LIMITING VALUE

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

C

Electrostatic discharge capacitor

Human body model

-

2

kV

voltage

(100 pF, 1.5 k

Ω)

d

g

s

4

1

23

January 1998

1

Rev 1.000

Số phần tương tự - BUK78150-55

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
NXP Semiconductors	BUK78150-55	67Kb / 9P	TrenchMOS transistor Standard level FET January 1998 Rev 1.000
NXP Semiconductors	BUK78150-55A	295Kb / 13P	TrenchMOS standard level FET Rev. 01-30 January 2001
Nexperia B.V. All right...	BUK78150-55A	931Kb / 13P	N-channel TrenchMOS standard level FET Rev. 02 - 16 June 2010
NXP Semiconductors	BUK78150-55A	341Kb / 13P	N-channel TrenchMOS standard level FET Rev. 02-16 June 2010

More results

Mô tả tương tự - BUK78150-55

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