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BUK7575-55 bảng dữ liệu(PDF) 2 Page - NXP Semiconductors |
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2 / 8 page Philips Semiconductors Product specification TrenchMOS ™ transistor BUK7575-55 Standard level FET STATIC CHARACTERISTICS T j= 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drain-source breakdown V GS = 0 V; ID = 0.25 mA; 55 - - V voltage T j = -55˚C 50 - - V V GS(TO) Gate threshold voltage V DS = VGS; ID = 1 mA 2.0 3.0 4.0 V T j = 175˚C 1.0 - - V T j = -55˚C - - 4.4 I DSS Zero gate voltage drain current V DS = 55 V; VGS = 0 V; - 0.05 10 µA T j = 175˚C - - 500 µA I GSS Gate source leakage current V GS = ±10 V; VDS = 0 V - 0.04 1 µA T j = 175˚C - - 20 µA ±V (BR)GSS Gate source breakdown voltage I G = ±1 mA; 16 - - V R DS(ON) Drain-source on-state V GS = 10 V; ID = 10 A - 60 75 m Ω resistance T j = 175˚C - - 157 m Ω DYNAMIC CHARACTERISTICS T mb = 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT g fs Forward transconductance V DS = 25 V; ID = 10 A 1 - - S C iss Input capacitance V GS = 0 V; VDS = 25 V; f = 1 MHz - 365 500 pF C oss Output capacitance - 110 135 pF C rss Feedback capacitance - 60 85 pF t d on Turn-on delay time V DD = 30 V; ID = 10 A; - 9 14 ns t r Turn-on rise time V GS = 10 V; RG = 10 Ω - 1621ns t d off Turn-off delay time Resistive load - 14 25 ns t f Turn-off fall time - 13 20 ns L d Internal drain inductance Measured from contact screw on - 3.5 - nH tab to centre of die L d Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH from package to centre of die L s Internal source inductance Measured from source lead 6 mm - 7.5 - nH from package to source bond pad REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T j = 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I DR Continuous reverse drain - - 19.7 A current I DRM Pulsed reverse drain current - - 79 A V SD Diode forward voltage I F = 19.7 A; VGS = 0 V - 0.95 1.2 V t rr Reverse recovery time I F = 19.7 A; -dIF/dt = 100 A/µs; - 32 - ns Q rr Reverse recovery charge V GS = -10 V; VR = 30 V - 0.12 - µC April 1998 2 Rev 1.100 |
Số phần tương tự - BUK7575-55 |
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Mô tả tương tự - BUK7575-55 |
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