MJ11032G datasheet(1/4 Pages) ONSEMI

tên linh kiện	MJ11032G

Giải thích chi tiết về linh kiện	High?묬urrent Complementary Silicon Power Transistors

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December, 2005 − Rev. 5

1

Publication Order Number:

MJ11028/D

MJ11028, MJ11030,

MJ11032 (NPN)

MJ11029, MJ11033 (PNP)

High−Current

Complementary Silicon

Power Transistors

High−Current Complementary Silicon Power Transistors are for use

as output devices in complementary general purpose amplifier

applications.

Features

• High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc

hFE = 400 (Min) @ IC = 50 Adc

• Curves to 100 A (Pulsed)

• Diode Protection to Rated IC

• Monolithic Construction with Built−In Base−Emitter Shunt Resistor

• Junction Temperature to +200_C

• Pb−Free Packages are Available*

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

MJ11028/29

MJ11030

MJ11032/33

VCEO

60

90

120

Vdc

Collector−Base Voltage

MJ11028/29

MJ11030

MJ11032/33

VCBO

60

90

120

Vdc

Emitter−Base Voltage

VEBO

5.0

Vdc

Collector Current − Continuous

− Peak (Note 1)

IC

50

100

Adc

Base Current − Continuous

IB

2.0

Adc

Total Power Dissipation @ TC = 25°C

Derate Above 25

°C @ TC = 100_C

PD

300

1.71

W

W/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

− 55 to +200

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Maximum Lead Temperature for

Soldering Purposes for

v 10 seconds

TL

275

_C

Thermal Resistance, Junction−to−Case

RqJC

0.58

°C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Pulse Test: Pulse Width = 5

ms, Duty Cycle ≤ 10%.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO−204 (TO−3)

CASE 197A

STYLE 1

50 AMPERE

COMPLEMENTARY

DARLINGTON POWER

TRANSISTORS

60 − 120 VOLTS

300 WATTS

MARKING DIAGRAM

MJ110xx = Device Code

xx = 28, 29, 30, 32, 33

G

= Pb−Free Package

A

= Location Code

YY

= Year

WW

= Work Week

MEX

= Country of Orgin

http://onsemi.com

MJ110xxG

AYYWW

MEX

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

ORDERING INFORMATION

Số phần tương tự - MJ11032G

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
ON Semiconductor	MJ11032G	121Kb / 4P	High-Current Complementary Silicon Power Transistors September, 2008 ??Rev. 6

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Mô tả tương tự - MJ11032G

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
ON Semiconductor	2N5684	151Kb / 7P	High?묬urrent Complementary Silicon Power Transistors March, 2006 ??Rev. 11
ON Semiconductor	MJ14001	96Kb / 5P	High?묬urrent Complementary Silicon Power Transistors December, 2005 ??Rev. 6
STMicroelectronics	TIP35C	47Kb / 4P	COMPLEMENTARY SILICON HIGH POWER TRANSISTORS
New Jersey Semi-Conduct...	2N3055A	309Kb / 3P	COMPLEMENTARY SILICON HIGH - POWER TRANSISTORS
ON Semiconductor	2N3055A	89Kb / 6P	Complementary Silicon High-Power Transistors April, 2006 ??Rev. 6
STMicroelectronics	TIP35CW	104Kb / 7P	Complementary Silicon High Power Transistors
STMicroelectronics	TIP36C	46Kb / 4P	COMPLEMENTARY SILICON HIGH POWER TRANSISTORS
Boca Semiconductor Corp...	2N3055A	200Kb / 4P	COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS
Boca Semiconductor Corp...	2N5883	190Kb / 4P	COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS
STMicroelectronics	2N5884	68Kb / 4P	COMPLEMENTARY SILICON HIGH POWER TRANSISTORS June 1997

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