MJ11032 datasheet(3/4 Pages) ONSEMI

tên linh kiện	MJ11032

Giải thích chi tiết về linh kiện	High?묬urrent Complementary Silicon Power Transistors

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nhà sản xuất	ONSEMI [ON Semiconductor]

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3 / 4 page

MJ11028, MJ11030, MJ11032 (NPN)

http://onsemi.com

3

ORDERING INFORMATION

Device

Package

Shipping

MJ11028

TO−204

100 Units / Tray

MJ11028G

TO−204

(Pb−Free)

MJ11029

TO−204

MJ11029G

TO−204

(Pb−Free)

MJ11030

TO−204

MJ11030G

TO−204

(Pb−Free)

MJ11032

TO−204

MJ11032G

TO−204

(Pb−Free)

MJ11033

TO−204

MJ11033G

TO−204

(Pb−Free)

100

0.2

Figure 2. DC Safe Operating Area

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

0.1

0.5

1

2

5

10

20

50

200

20

10

5

50

2

1

0.5

0.2

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25°C

SECOND BREAKDOWN LIMITED

MJ11028, 29

MJ11032, 33

100

There are two limitations on the power−handling ability

of a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation, i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 2 is based on TJ(pk) = 200_C; TC is

variable

depending

on

conditions.

At

high

case

temperatures, thermal limitations will reduce the power that

can be handled to values less than the limitations imposed by

second breakdown.

IC, COLLECTOR CURRENT (AMP)

100 k

IC, COLLECTOR CURRENT (AMP)

50 k

20 k

10 k

5 k

2 k

500

Figure 3. DC Current Gain

12

510

100

20

50

Figure 4. “On” Voltage

100

VCE = 5 V

TJ = 25°C

1 k

200

MJ11029, MJ11033 PNP

MJ11028, MJ11030, MJ11032 NPN

5

4

3

2

1

2

5

10

100

20

50

0

3

TJ = 25°C

IC/IB = 100

VBE(sat)

80 ms

(PULSED)

MJ11029, MJ11033 PNP

MJ11028, MJ11030, MJ11032 NPN

80 ms

(PULSED)

VCE(sat)

Số phần tương tự - MJ11032

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Mospec Semiconductor	MJ11032	154Kb / 3P	POWER TRANSISTOR(50A,60-120V,300W)
Motorola, Inc	MJ11032	153Kb / 4P	50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS
ON Semiconductor	MJ11032	153Kb / 4P	COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 1995
Wing Shing Computer Com...	MJ11032	24Kb / 1P	NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)
Seme LAB	MJ11032	59Kb / 2P	COMPLEMENTARY DARLINGTON POWER TRANSISTOR

More results

Mô tả tương tự - MJ11032

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
ON Semiconductor	2N5684	151Kb / 7P	High?묬urrent Complementary Silicon Power Transistors March, 2006 ??Rev. 11
ON Semiconductor	MJ14001	96Kb / 5P	High?묬urrent Complementary Silicon Power Transistors December, 2005 ??Rev. 6
STMicroelectronics	TIP35C	47Kb / 4P	COMPLEMENTARY SILICON HIGH POWER TRANSISTORS
New Jersey Semi-Conduct...	2N3055A	309Kb / 3P	COMPLEMENTARY SILICON HIGH - POWER TRANSISTORS
ON Semiconductor	2N3055A	89Kb / 6P	Complementary Silicon High-Power Transistors April, 2006 ??Rev. 6
STMicroelectronics	TIP35CW	104Kb / 7P	Complementary Silicon High Power Transistors
STMicroelectronics	TIP36C	46Kb / 4P	COMPLEMENTARY SILICON HIGH POWER TRANSISTORS
Boca Semiconductor Corp...	2N3055A	200Kb / 4P	COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS
Boca Semiconductor Corp...	2N5883	190Kb / 4P	COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS
STMicroelectronics	2N5884	68Kb / 4P	COMPLEMENTARY SILICON HIGH POWER TRANSISTORS June 1997

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