MCR12DSN-001 datasheet(2/7 Pages) ONSEMI

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THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance,− Junction−to−Case

Thermal Resistance − Junction−to−Ambient

Thermal Resistance − Junction−to−Ambient (Note 2)

RqJC

RqJA

2.2

88

80

°C/W

Maximum Lead Temperature for Soldering Purposes (Note 3)

TL

260

°C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristics

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak Repetitive Forward or Reverse Blocking Current (Note 4)

(VAK = Rated VDRM or VRRM; RGK = 1.0 KW)TJ = 25°C

TJ = 110°C

IDRM,

IRRM

−

10

500

mA

ON CHARACTERISTICS

Peak Reverse Gate Blocking Voltage, (IGR = 10 mA)

VGRM

10

12.5

18

V

Peak Reverse Gate Blocking Current, (VGR = 10 V)

IGRM

−

1.2

mA

Peak Forward On−State Voltage (Note 5), (ITM = 20 A)

VTM

−

1.3

1.9

V

Gate Trigger Current (Continuous dc) (Note 6)

(VD = 12 V, RL = 100 W)TJ = 25°C

TJ = −40°C

IGT

5.0

−

12

−

200

300

mA

Gate Trigger Voltage (Continuous dc) (Note 6)

(VD = 12 V, RL = 100 W)TJ = 25°C

TJ = −40°C

TJ = 110°C

VGT

0.45

−

0.2

0.65

−

1.0

1.5

−

V

Holding Current

(VD = 12 V, Initiating Current = 200 mA, Gate Open)

TJ = 25°C

TJ = −40°C

IH

0.5

−

1.0

−

6.0

10

mA

Latching Current

(VD = 12 V, IG = 2.0 mA)

TJ = 25°C

TJ = −40°C

IL

0.5

−

1.0

−

6.0

10

mA

Turn−On Time

(Source Voltage = 12 V, RS = 6.0 KW, IT = 16 A(pk), RGK = 1.0 KW)

(VD = Rated VDRM, Rise Time = 20 ns, Pulse Width = 10 ms)

tgt

−

2.0

5.0

ms

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Off−State Voltage

(VD = 0.67 x Rated VDRM, Exponential Waveform, RGK = 1.0 KW, TJ = 110°C)

dv/dt

2.0

10

−

V/

ms

2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.

3. 1/8

″ from case for 10 seconds.

4. Ratings apply for negative gate voltage or RGK = 1.0 kW. Devices shall not have a positive gate voltage concurrently with a negative voltage

on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage

applied exceeds the rated blocking voltage.

5. Pulse Test: Pulse Width

≤ 2.0 msec, Duty Cycle ≤ 2%.

6. RGK current not included in measurement.

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nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Kersemi Electronic Co.,...	MCR12DSN-001	436Kb / 7P	Silicon Controlled Rectifiers

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