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MCR12DSN-001 bảng dữ liệu(PDF) 5 Page - ON Semiconductor

tên linh kiện MCR12DSN-001
Giải thích chi tiết về linh kiện  Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
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nhà sản xuất  ONSEMI [ON Semiconductor]
Trang chủ  http://www.onsemi.com
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MCR12DSN-001 bảng dữ liệu(HTML) 5 Page - ON Semiconductor

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MCR12DSM, MCR12DSN
http://onsemi.com
5
Figure 9. Holding Current versus
Gate−Cathode Resistance
1000
10 K
100
RGK, GATE−CATHODE RESISTANCE (OHMS)
10
6.0
4.0
2.0
0
TJ = 25°C
Figure 10. Exponential Static dv/dt versus
Gate−Cathode Resistance and Junction
Temperature
100
RGK, GATE−CATHODE RESISTANCE (OHMS)
1000
10
1.0
TJ = 110°C
1000
IGT = 10 mA
Figure 11. Exponential Static dv/dt versus
Gate−Cathode Resistance and Peak Voltage
Figure 12. Exponential Static dv/dt versus
Gate−Cathode Resistance and Gate Trigger
Current Sensitivity
8.0
IGT = 25 mA
100
90
°C
70
°C
100
RGK, GATE−CATHODE RESISTANCE (OHMS)
1000
10
1.0
TJ = 110°C
1000
100
VPK = 800 V
600 V
400 V
100
RGK, GATE−CATHODE RESISTANCE (OHMS)
1000
10
1.0
VD = 800 V
TJ = 110°C
1000
100
IGT = 10 mA
IGT = 25 mA
ORDERING INFORMATION
Device
Package Type
Package
Shipping
MCR12DSMT4
DPAK
369C
2500 / Tape & Reel
MCR12DSMT4G
DPAK
(Pb−Free)
369C
2500 / Tape & Reel
MCR12DSN−001
DPAK−3
369D
75 Units / Rail
MCR12DSN−001G
DPAK−3
(Pb−Free)
369D
75 Units / Rail
MCR12DSNT4
DPAK
369C
2500 / Tape & Reel
MCR12DSNT4G
DPAK
(Pb−Free)
369C
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.


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