MCR8SN datasheet(2/5 Pages) ONSEMI

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MCR8SD, MCR8SM, MCR8SN

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THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Thermal Resistance,

Junction−to−Case

Junction−to−Ambient

RqJC

RqJA

2.2

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes 1/8

″ from Case for 10 Seconds

TL

260

°C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak Repetitive Forward or Reverse Blocking Current (Note 3)

(VD = Rated VDRM and VRRM; RGK = 1 kW)TJ = 25°C

TJ = 110°C

IDRM,

IRRM

−

10

500

mA

ON CHARACTERISTICS

Peak Forward On−State Voltage (Note 2)

(ITM = 16 A)

VTM

−

1.8

V

Gate Trigger Current (Continuous dc) (Note 4)

(VD = 12 V; RL = 100 W)

IGT

5.0

25

200

mA

Holding Current (Note 4)

(VD = 12 V, Gate Open, Initiating Current = 200 mA)

IH

−

0.5

6.0

mA

Latch Current (Note 4)

(VD = 12 V, IG = 200 mA)

IL

−

0.6

8.0

mA

Gate Trigger Voltage (Continuous dc) (Note 4)

TJ = 25°C

(VD = 12 V; RL = 100 W)TJ = *40°C

VGT

0.3

−

0.65

−

1.0

1.5

V

Gate Non−Trigger Voltage

TJ = 110°C

(VD = 12 V, RL = 100 W)

VGD

0.2

−

V

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Off−State Voltage

(VD = 67% VDRM, RGK = 1 KW, CGK = 0.1 mF, TJ = 110°C)

dv/dt

5.0

15

−

V/

ms

Critical Rate of Rise of On−State Current

IPK = 50 A, Pw = 40

msec, diG/dt = 1 A/msec, Igt = 10 mA

di/dt

−

100

A/

ms

2. Indicates Pulse Test: Pulse Width

v2.0 ms, Duty Cycle v2%.

3. RGK = 1000 Ohms included in measurement.

4. Does not include RGK in measurement.

Số phần tương tự - MCR8SN

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Digitron Semiconductors	MCR8SN	296Kb / 4P	SILICON CONTROLLED RECTIFIERS
Kersemi Electronic Co.,...	MCR8SN	421Kb / 5P	Silicon Controlled Rectifiers

More results

Mô tả tương tự - MCR8SN

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Unisonic Technologies	MCK100	173Kb / 4P	SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS
	MCR100	171Kb / 6P	SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS
	MCR101	183Kb / 5P	SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS
	MCR100	139Kb / 4P	SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS
ON Semiconductor	MCR716	60Kb / 5P	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors November, 2005 ??Rev. 5
	MCR72	64Kb / 6P	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors December, 2005 ??Rev. 3
	NYC008-6JG	142Kb / 7P	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors January, 2010 ??Rev. 0
SEMTECH ELECTRONICS LTD...	MCR100	249Kb / 3P	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
ON Semiconductor	MCR8DSM	67Kb / 6P	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors November, 2005 ??Rev. 4
ON Semiconductor	MCR703A	66Kb / 6P	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors November, 2007 ??Rev. 7

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