MCR12DSM datasheet(1/7 Pages) ONSEMI

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November, 2005 − Rev. 4

1

Publication Order Number:

MCR12DSM/D

MCR12DSM, MCR12DSN

Preferred Device

Sensitive Gate Silicon

Controlled Rectifiers

Reverse Blocking Thyristors

Designed for high volume, low cost, industrial and consumer

applications such as motor control; process control; temperature, light

and speed control.

Features

• Small Size

• Passivated Die for Reliability and Uniformity

• Low Level Triggering and Holding Characteristics

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings:

Human Body Model, 3B

u 8000 V

Machine Model, C

u 400 V

• Pb−Free Packages are Available

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off−State Voltage (Note 1)

(TJ = −40 to 110°C, Sine Wave, 50 to 60 Hz,

Gate Open)

MCR12DSM

MCR12DSN

VDRM,

VRRM

600

800

V

On−State RMS Current

(180

° Conduction Angles; TC = 75°C)

IT(RMS)

12

A

Average On−State Current

(180

° Conduction Angles; TC = 75°C)

IT(AV)

7.6

A

Peak Non-Repetitive Surge Current

(1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C)

ITSM

100

A

Circuit Fusing Consideration (t = 8.3 msec)

I2t

41

A2sec

Forward Peak Gate Power

(Pulse Width

≤ 1.0 msec, TC = 75°C)

PGM

5.0

W

Forward Average Gate Power

(t = 8.3 msec, TC = 75°C)

PG(AV)

0.5

W

Forward Peak Gate Current

(Pulse Width

≤ 1.0 msec, TC = 75°C)

IGM

2.0

A

Operating Junction Temperature Range

TJ

−40 to 110

°C

Storage Temperature Range

Tstg

−40 to 150

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the device are exceeded.

SCRs

12 AMPERES RMS

600 − 800 VOLTS

Preferred devices are recommended choices for future use

and best overall value.

K

G

A

PIN ASSIGNMENT

1

2

3

Anode

Gate

Cathode

4

Anode

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

DPAK−3

CASE 369D

STYLE 4

DPAK

CASE 369C

STYLE 4

MARKING

DIAGRAMS

Y

= Year

WW

= Work Week

R12DSx

= Device Code

x= M or N

G

= Pb−Free Package

1 2

3

4

YWW

R1

2DSxG

1

2

3

4

YWW

R1

2DSxG

Số phần tương tự - MCR12DSM

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