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MCR12DCN bảng dữ liệu(PDF) 2 Page - ON Semiconductor

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Giải thích chi tiết về linh kiện  Silicon Controlled Rectifiers Reverse Blocking Thyristors
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MCR12DCN bảng dữ liệu(HTML) 2 Page - ON Semiconductor

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MCR12DCM, MCR12DCN
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 2)
RqJC
RqJA
RqJA
2.2
88
80
°C/W
Maximum Lead Temperature for Soldering Purposes (Note 3)
TL
260
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
TJ = 25°C
TJ = 125°C
IDRM,
IRRM
0.01
5.0
mA
ON CHARACTERISTICS
Peak Forward On−State Voltage (Note 4) (ITM = 20 A)
VTM
1.3
1.9
V
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 W)TJ = 25°C
TJ = *40°C
IGT
2.0
7.0
20
40
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 W)TJ = 25°C
TJ = *40°C
VGT
0.5
0.65
1.0
2.0
V
Gate Non−Trigger Voltage
(VD = 12 V, RL = 100 W)TJ = 125°C
VGD
0.2
V
Holding Current
(VD = 12 V, Initiating Current = 200 mA, Gate Open) TJ = 25°C
TJ = −40°C
IH
4.0
22
40
80
mA
Latching Current
(VD = 12 V, IG = 20 mA, TJ = 25°C)
(VD = 12 V, IG = 40 mA, TJ = −40°C)
IL
4.0
22
40
80
mA
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
dv/dt
50
200
V/
ms
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
3. 1/8
″ from case for 10 seconds.
4. Pulse Test: Pulse Width
≤ 2.0 msec, Duty Cycle ≤ 2%.
ORDERING INFORMATION
Device
Package
Shipping
MCR12DCMT4
DPAK
2500 / Tape and Reel
MCR12DCMT4G
DPAK
(Pb−Free)
2500 / Tape and Reel
MCR12DCNT4
DPAK
2500 / Tape and Reel
MCR12DCNT4G
DPAK
(Pb−Free)
2500 / Tape and Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.


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