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MCR12DCN bảng dữ liệu(PDF) 2 Page - ON Semiconductor |
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MCR12DCN bảng dữ liệu(HTML) 2 Page - ON Semiconductor |
2 / 5 page MCR12DCM, MCR12DCN http://onsemi.com 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance − Junction−to−Case − Junction−to−Ambient − Junction−to−Ambient (Note 2) RqJC RqJA RqJA 2.2 88 80 °C/W Maximum Lead Temperature for Soldering Purposes (Note 3) TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C TJ = 125°C IDRM, IRRM − − − − 0.01 5.0 mA ON CHARACTERISTICS Peak Forward On−State Voltage (Note 4) (ITM = 20 A) VTM − 1.3 1.9 V Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W)TJ = 25°C TJ = *40°C IGT 2.0 − 7.0 − 20 40 mA Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W)TJ = 25°C TJ = *40°C VGT 0.5 − 0.65 − 1.0 2.0 V Gate Non−Trigger Voltage (VD = 12 V, RL = 100 W)TJ = 125°C VGD 0.2 − − V Holding Current (VD = 12 V, Initiating Current = 200 mA, Gate Open) TJ = 25°C TJ = −40°C IH 4.0 − 22 − 40 80 mA Latching Current (VD = 12 V, IG = 20 mA, TJ = 25°C) (VD = 12 V, IG = 40 mA, TJ = −40°C) IL 4.0 − 22 − 40 80 mA DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off−State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) dv/dt 50 200 − V/ ms 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. 3. 1/8 ″ from case for 10 seconds. 4. Pulse Test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%. ORDERING INFORMATION Device Package Shipping† MCR12DCMT4 DPAK 2500 / Tape and Reel MCR12DCMT4G DPAK (Pb−Free) 2500 / Tape and Reel MCR12DCNT4 DPAK 2500 / Tape and Reel MCR12DCNT4G DPAK (Pb−Free) 2500 / Tape and Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. |
Số phần tương tự - MCR12DCN |
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Mô tả tương tự - MCR12DCN |
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