MCR8DSN datasheet(1/6 Pages) ONSEMI

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November, 2005 − Rev. 4

1

Publication Order Number:

MCR8DSM/D

MCR8DSM, MCR8DSN

Preferred Device

Sensitive Gate

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Designed for high volume, low cost, industrial and consumer

applications such as motor control; process control; temperature, light

and speed control.

Features

• Small Size

• Passivated Die for Reliability and Uniformity

• Low Level Triggering and Holding Characteristics

• Available in Two Package Styles

Surface Mount Lead Form − Case 369C

Miniature Plastic Package − Straight Leads − Case 369

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings:

Human Body Model, 3B

u 8000 V

Machine Model, C

u 400 V

• Pb−Free Packages are Available

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off−State Voltage (Note 1)

(TJ = −40 to 110°C, Sine Wave, 50 to 60 Hz,

Gate Open)

MCR8DSM

MCR8DSN

VDRM,

VRRM

600

800

V

On−State RMS Current

(180

° Conduction Angles; TC = 90°C)

IT(RMS)

8.0

A

Average On−State Current

(180

° Conduction Angles; TC = 90°C)

IT(AV)

5.1

A

Peak Non-Repetitive Surge Current

(1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C)

ITSM

90

A

Circuit Fusing Consideration (t = 8.3 msec)

I2t

34

A2sec

Forward Peak Gate Power

(Pulse Width

≤ 1.0 msec, TC = 90°C)

PGM

5.0

W

Forward Average Gate Power

(t = 8.3 msec, TC = 90°C)

PG(AV)

0.5

W

Forward Peak Gate Current

(Pulse Width

≤ 1.0 msec, TC = 90°C)

IGM

2.0

A

Operating Junction Temperature Range

TJ

−40 to 110

°C

Storage Temperature Range

Tstg

−40 to 150

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings

apply for negative gate voltage; positive gate voltage shall not be applied

concurrent with negative potential on the anode. Blocking voltages shall not

be tested with a constant current source such that the voltage ratings of the

device are exceeded.

SCRs

8 AMPERES RMS

600 − 800 VOLTS

Preferred devices are recommended choices for future use

and best overall value.

K

G

A

PIN ASSIGNMENT

1

2

3

Anode

Gate

Cathode

4

Anode

DPAK

CASE 369C

STYLE 4

MARKING

DIAGRAM

Y

= Year

WW

= Work Week

CR8DSx = Device Code

x= M or N

G

= Pb−Free Package

1

4

YWW

CR

8DSxG

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

Số phần tương tự - MCR8DSN

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Motorola, Inc	MCR8DSN	127Kb / 6P	Silicon Controlled Rectifiers
Kersemi Electronic Co.,...	MCR8DSN	429Kb / 6P	Silicon Controlled Rectifiers
	MCR8DSNT4	447Kb / 6P	Silicon Controlled Rectifiers
	MCR8DSNT4	429Kb / 6P	Silicon Controlled Rectifiers

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Mô tả tương tự - MCR8DSN

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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