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2SA1020 bảng dữ liệu(PDF) 1 Page - ON Semiconductor

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Giải thích chi tiết về linh kiện  One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE FOR PNP TRANSISTORS
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2SA1020 bảng dữ liệu(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 3
1
Publication Order Number:
2SA1020/D
2SA1020
Preferred Device
One Watt High Current
PNP Transistor
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCE
50
Vdc
Collector −Base Voltage
VCB
50
Vdc
Emitter −Base Voltage
VEB
5.0
Vdc
Collector Current − Continuous
IC
2.0
Adc
Total Power Dissipation @ TA = 25°C
Derate above 25
°C
PD
900
5.0
mW
mW/
°C
Total Power Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
W
mW/
°C
Operating and Storage Junction Temperature
Range
TJ, Tstg
−55 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
125
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
VOLTAGE AND CURRENT
ARE NEGATIVE FOR
PNP TRANSISTORS
COLLECTOR
2
3
BASE
1
EMITTER
PNP
TO−92 (TO−226)
CASE 29−10
STYLE 14
3
2
1
MARKING DIAGRAM
2SA
1020
AYWW
G
G
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
(Note: Microdot may be in either location)


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