STGP3NB60KDFP datasheet(3/12 Pages) STMICROELECTRONICS

tên linh kiện	STGP3NB60KDFP

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STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD

SWITCHING PARAMETERS

COLLECTOR-EMITTER DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(**)Losses include Also the Tail (Jedec Standardization)

(#) Calculated according to the iterative formula:

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VCE =25V,Ic= 3A

2.4

S

Cies

Coes

Cres

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VCE =25V,f= 1MHz,VGE = 0

220

50

5.8

pF

Qg

Qge

Qgc

Total Gate Charge

Gate-Emitter Charge

Gate-Collector Charge

VCE = 480V, IC =3A,

VGE = 15V

14

3.3

7.5

18

nC

tscw

Short Circuit Withstand Time

Vce =0.5 VBR(CES),VGE=15V,

Tj = 125°C, RG =10 Ω

10

µs

td(on)

tr

Turn-on Delay Time

Rise Time

VCC = 480 V, IC =3 A

RG =10Ω,VGE =15 V

14

5

ns

(di/dt)on

Eon

Turn-on Current Slope

Turn-on Switching Losses

VCC= 480 V, IC =3 ARG=10Ω

VGE =15 V,Tj=125°C

520

30

A/µs

µJ

tc

tr(Voff)

td(off)

tf

Eoff(**)

Ets

Cross-over Time

Off Voltage Rise Time

Delay Time

Fall Time

Turn-off Switching Loss

Total Switching Loss

Vcc =480 V, IC =3 A,

RGE =10 Ω ,VGE =15 V

Tj = 25 °C

90

20

33

100

58

85

ns

µJ

tc

tr(Voff)

td(off)

tf

Eoff(**)

Ets

Cross-over Time

Off Voltage Rise Time

Delay Time

Fall Time

Turn-off Switching Loss

Total Switching Loss

Vcc =480 V, IC =3 A,

RGE =10 Ω ,VGE =15 V

Tj = 125 °C

190

54

90

130

111

195

ns

µJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

If

Ifm

Forward Current

Forward Current Pulsed

3

24

A

Vf

Forward On-Voltage

If =1.5 A

If =1.5 A, Tj =125 °C

1.2

0.95

1.8

V

trr

Qrr

Irrm

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

If =3A ,VR =35 V,

Tj =125°C, di/dt = 100A/

µs

45

70

2.7

ns

nC

A

I

C TC

()

T

JMAX

T

C

–

R

THJ

C

–

V

CES AT MAX

() TC IC

,

()

×

--------------------------------------------------------------------------------------

=

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nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STGP3NB60K	293Kb / 11P	N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMES TM IGBT

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nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STGB14NC60KD	833Kb / 17P	N-channel 14A - 600V - TO-220 - TO-220FP - D2PAK Short circuit rated PowerMESH TM IGBT
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	STGP10NB60S	387Kb / 13P	N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT
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