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STGB3NB60HD bảng dữ liệu(PDF) 3 Page - STMicroelectronics |
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STGB3NB60HD bảng dữ liệu(HTML) 3 Page - STMicroelectronics |
3 / 12 page 3/12 STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC SWITCHING ON SWITCHING OFF Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) COLLECTOR-EMITTER DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs Forward Transconductance VCE =25V , IC =3 A 2.4 S Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 25V,f= 1MHz,VGE = 0 235 33 6.6 pF pF pF Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 480V, IC =3A, VGE =15V 21 6 7.6 27 nC nC nC ICL Latching Current Vclamp = 480 V , Tj = 125°C RG =10 Ω 12 A Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VCC =480 V, IC =3 A RG =10Ω ,VGE =15V 5 11 ns ns (di/dt)on Eon Turn-on Current Slope Turn-on Switching Losses VCC= 480 V, IC = 3ARG=10Ω VGE = 15 V,Tj = 125°C 400 77 A/µs µJ Symbol Parameter Test Conditions Min. Typ. Max. Unit tc Cross-over Time Vcc = 480 V, IC =3 A, RGE =10 Ω ,VGE =15 V 76 ns tr(Voff) Off Voltage Rise Time 36 ns td(off) Delay Time 53 ns tf Fall Time 77 ns Eoff(**) Turn-off Switching Loss 33 µJ Ets Total Switching Loss 110 µJ tc Cross-over Time Vcc = 480 V, IC =3 A, RGE =10 Ω ,VGE =15 V Tj = 125 °C 180 ns tr(Voff) Off Voltage Rise Time 82 ns td(off) Delay Time 58 ns tf Fall Time 110 ns Eoff(**) Turn-off Switching Loss 88 µJ Ets Total Switching Loss 165 µJ Symbol Parameter Test Conditions Min. Typ. Max. Unit If Ifm Forward Current Forward Current pulsed 3 24 A A Vf Forward On-Voltage If =3A If =3A,Tj= 125 °C 1.6 1.4 2.0 V V trr Qrr Irrm Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If =3A ,VR =35 V, Tj =125°C, di/dt = 100 A/ µs 45 70 2.7 ns nC A |
Số phần tương tự - STGB3NB60HD |
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Mô tả tương tự - STGB3NB60HD |
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