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STC12IE90HV bảng dữ liệu(PDF) 1 Page - STMicroelectronics |
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STC12IE90HV bảng dữ liệu(HTML) 1 Page - STMicroelectronics |
1 / 11 page Preliminary Data This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. January 2007 Rev 1 1/11 11 Order codes Part Number Marking Package Packaging STC12IE90HV C12IE90HV TO247-4L HV Tube STC12IE90HV Emitter Switched Bipolar Transistor ESBT® 900 V - 12 A - 0.083 Ω General features ■ High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch up to 150 kHz ■ Squared RBSOA up to 900V ■ Very low Ciss driven by RG = 47Ω ■ Very low turn-off cross over time Applications ■ Aux Smps For Three Phase Mains Description The STC12IE90HV is manufactured in Monolithic ESBT Technology, aimed to provide best perfor- mances in high frequency / high voltage applica- tions. It is designed for use in Gate Driven based topolo- gies. Internal schematic diagrams VCS(ON) IC RCS(ON) 1V 12A 0.083 W 1 2 3 4 TO247-4L HV www.st.com |
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