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1N5820G bảng dữ liệu(PDF) 1 Page - ON Semiconductor

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Giải thích chi tiết về linh kiện  Axial Lead Rectifiers
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© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 9
1
Publication Order Number:
1N5820/D
1N5820, 1N5821, 1N5822
1N5820 and 1N5822 are Preferred Devices
Axial Lead Rectifiers
This series employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
chrome barrier metal, epitaxial construction with oxide passivation
and metal overlap contact. Ideally suited for use as rectifiers in
low−voltage, high−frequency inverters, free wheeling diodes, and
polarity protection diodes.
Features
Extremely Low VF
Low Power Loss/High Efficiency
Low Stored Charge, Majority Carrier Conduction
Shipped in plastic bags, 500 per bag
Available in Tape and Reel, 1500 per reel, by adding a “RL’’ suffix to
the part number
Pb−Free Packages are Available*
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.1 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260
°C Max. for 10 Seconds
Polarity: Cathode indicated by Polarity Band
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
AXIAL LEAD
CASE 267−05
(DO−201AD)
STYLE 1
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
20, 30, 40 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
MARKING DIAGRAM
See detailed ordering and shipping information on page 3 of
this data sheet.
ORDERING INFORMATION
http://onsemi.com
A
= Assembly Location
1N582x
= Device Code
x
= 0, 1, or 2
YY
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
A
1N
582x
YYWW
G
G


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