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IRF3007LPBF bảng dữ liệu(PDF) 1 Page - International Rectifier |
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1 / 11 page HEXFET® Power MOSFET Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. S D G VDSS = 75V RDS(on) = 0.0126Ω ID = 62A Description 07/01/04 www.irf.com 1 l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Features Typical Applications l 42 Volts Automotive Electrical Systems l Lead-Free AUTOMOTIVE MOSFET IRF3007SPbF IRF3007LPbF TO-262 IRF3007L D2Pak IRF3007S ** This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 62 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 44 A IDM Pulsed Drain Current 320 PD @TC = 25°C Power Dissipation 120 W Linear Derating Factor 0.8 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 290 mJ EAS (6 sigma) Single Pulse Avalanche Energy Tested Value 946 IAR Avalanche Current See Fig.12a, 12b, 15, 16 A EAR Repetitive Avalanche Energy mJ TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.25 °C/W RθJA Junction-to-Ambient (PCB Mounted,steady state)** ––– 62 Thermal Resistance PD - 95494 |
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Mô tả tương tự - IRF3007LPBF |
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