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IRF3007LPBF bảng dữ liệu(PDF) 1 Page - International Rectifier

tên linh kiện IRF3007LPBF
Giải thích chi tiết về linh kiện  HEXFET Power MOSFET
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nhà sản xuất  IRF [International Rectifier]
Trang chủ  http://www.irf.com
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HEXFET® Power MOSFET
Specifically designed for Automotive applications, this design of
HEXFET® Power MOSFETs
utilizes the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed and improved
repetitive avalanche rating. These combine to make this design an
extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
S
D
G
VDSS = 75V
RDS(on) = 0.0126Ω
ID = 62A
Description
07/01/04
www.irf.com
1
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
Features
Typical Applications
l
42 Volts Automotive Electrical Systems
l
Lead-Free
AUTOMOTIVE MOSFET
IRF3007SPbF
IRF3007LPbF
TO-262
IRF3007L
D2Pak
IRF3007S
** This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
62
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
44
A
IDM
Pulsed Drain Current

320
PD @TC = 25°C
Power Dissipation
120
W
Linear Derating Factor
0.8
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚
290
mJ
EAS (6 sigma)
Single Pulse Avalanche Energy Tested Value
‡
946
IAR
Avalanche Current

See Fig.12a, 12b, 15, 16
A
EAR
Repetitive Avalanche Energy
†
mJ
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.25
°C/W
RθJA
Junction-to-Ambient (PCB Mounted,steady state)**
–––
62
Thermal Resistance
PD - 95494


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