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STF8NK100Z bảng dữ liệu(PDF) 3 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  N-CHANNEL 1000V - 1.60OHM - 6.5A - TO-220 - TO-220FP Zener-Protected SuperMESH TM MOSFET
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STF8NK100Z - STP8NK100Z
2 Electrical characteristics
3/13
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4.
On/off states
Table 5.
Dynamic
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-Source Breakdown
Voltage
ID = 1mA, VGS= 0
1000
V
IDSS
Zero Gate Voltage Drain
Current (VGS = 0)
VDS = Max Rating,
VDS = Max Rating,Tc = 125°C
1
50
µA
µA
IGSS
Gate Body Leakage Current
(VDS = 0)
VGS = ±20V
±
10
µA
VGS(th)
Gate Threshold Voltage
VDS= VGS, ID = 100 µA
33.75
4.5
V
RDS(on)
Static Drain-Source On
Resistance
VGS= 10 V, ID= 3.15 A
1.60
1.85
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs Note 6
Forward Transconductance
VDS =15V, ID=3.15 A
7S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS =25V, f=1 MHz, VGS=0
2180
174
36
pF
pF
pF
Coss eq.
Note 5
Equivalent Output
Capacitance
VGS=0V, VDS=0 to 800V
83
pF
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=800V, ID = 6.3A
VGS =10V
(see Figure 17)
73
12
40
102
nC
nC
nC


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