2

Absolute

Symbol

Parameter

Units

Maximum

I

d

Device Current

mA

90

P

diss

mW

370

RF Input Power

dBm

20

T

j

Channel Temperature

°C

150

T

STG

Storage Temperature

°C

-65 to 150

θ

jc

°C/W

163

Notes:

1. Operation of this device above any one of

these parameters may cause permanent

damage.

2. Ground lead temperature is 25

°C.

Derate 6.1 mW/

°C for TL >89°C .

3. Junction-to-case thermal resistance

measured using 150

°C Liquid Crystal

Measurement method.

ADA-4743 Electrical Specifications

Symbol

Parameter and Test Condition:

Frequency

Units

Min.

Typ.

Max.

Std. Dev.

V

3.3

3.8

4.3

Gp

2

100 MHz

dB

16.6

900 MHz

[1,2]

15

16.5

18

∆Gp

Gain Flatness

100 to 900 MHz

dB

0.5

0.1 to 2 GHz

1.5

F

3dB

3 dB Bandwidth

GHz

4

VSMR

in

Input Voltage Standing Wave Ratio

0.1 to 6 GHz

1.7:1

VSMR

out

Output Voltage Standing Wave Ratio

0.1 to 6 GHz

1.5:1

NF

50

Ω Noise Figure

100 MHz

dB

4.1

0.11

4.2

0.16

P

1dB

Output Power at 1dB Gain Compression

100 MHz

dBm

17.7

17.1

OIP

3

dBm

33.4

900 MHz

[1,2,3]

32.6

DV/dT

Device Voltage Temperature Coefficient

mV/

°C

-4.9

Notes:

1. Typical value determined from a sample size of 500 parts from 3 wafers.

2. Measurement obtained using production test board described in the block diagram below.

3. I) 900 MHz OIP

II) 100 MHz OIP

Block diagram of 900 MHz production test board used for V

Circuit losses have been de-embedded from actual measurements.

Input

50 Ohm

Transmission

(0.5 dB loss)

DUT

50 Ohm

Transmission

including Bias

(0.5 dB loss)

Output