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BU2708DF bảng dữ liệu(PDF) 2 Page - NXP Semiconductors |
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BU2708DF bảng dữ liệu(HTML) 2 Page - NXP Semiconductors |
2 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708DF THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th j-hs Junction to heatsink without heatsink compound - 3.7 K/W R th j-hs Junction to heatsink with heatsink compound - 2.8 K/W R th j-a Junction to ambient in free air 35 - K/W ISOLATION LIMITING VALUE & CHARACTERISTIC T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V isol Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V three terminals to external heatsink C isol Capacitance from T2 to external f = 1 MHz - 22 - pF heatsink STATIC CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CES Collector cut-off current 2 V BE = 0 V; VCE = VCESMmax - - 1.0 mA I CES V BE = 0 V; VCE = VCESMmax; - - 2.0 mA T j = 125 ˚C BV EBO Emitter-base breakdown voltage I B = 600 mA 7.5 13.5 - V R BE Base-emitter resistance V EB = 7.5 V 45 Ω V CEsat Collector-emitter saturation voltage I C = 4 A; IB = 1.33 A - - 1.0 V V BEsat Base-emitter saturation voltage I C = 4 A; IB = 1.33 A 0.83 0.91 1.00 V V F Diode forward voltage I F = 4 A 1.6 V h FE DC current gain I C = 1 A; VCE = 5 V - 15 - h FE I C = 4 A; VCE = 1 V 3 6 7.3 DYNAMIC CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Switching times (line deflection I Csat = 4 A; LC = 1 mH; CFB = 12.2 nF; circuit 16 kHz) V CC = 120 V; IB(end) = 0.8 A; LB = 6 µH; -V BB = 4 V; -IBM = ICM/2 t s Turn-off storage time 4.8 5.5 µs t f Turn-off fall time 0.4 0.52 µs 2 Measured with half sine-wave voltage (curve tracer). September 1997 2 Rev 1.400 |
Số phần tương tự - BU2708DF |
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Mô tả tương tự - BU2708DF |
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