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BU1706A bảng dữ liệu(PDF) 1 Page - NXP Semiconductors |
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1 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706A GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V CESM Collector-emitter voltage peak value V BE = 0 V - 1750 V V CEO Collector-emitter voltage (open base) - 850 V I C Collector current (DC) - 5 A I CM Collector current peak value - 8 A P tot Total power dissipation T mb ≤ 25 ˚C - 100 W V CEsat Collector-emitter saturation voltage I C = 1.5 A; IB = 0.3 A - 1.0 V I Csat Collector saturation current 1.5 - A t f Fall time I CM = 1.5 A; IB(on) = 0.3 A 0.25 0.6 µs PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 base 2 collector 3 emitter tab collector LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CESM Collector-emitter voltage peak value V BE = 0 V - 1750 V V CEO Collector-emitter voltage (open base) - 850 V I C Collector current (DC) - 5 A I CM Collector current peak value - 8 A I B Base current (DC) - 3 A I BM Base current peak value - 5 A -I B(AV) Reverse base current average over any 20ms period - 100 mA -I BM Reverse base current peak value - 4 A P tot Total power dissipation T mb ≤ 25 ˚C - 100 W T stg Storage temperature -65 150 ˚C T j Junction temperature - 150 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th j-mb Junction to mounting base - 1.25 K/W R th j-a Junction to ambient in free air 60 - K/W 12 3 tab b c e September 1997 1 Rev 1.000 |
Số phần tương tự - BU1706A |
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Mô tả tương tự - BU1706A |
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