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SS10PH9 bảng dữ liệu(PDF) 1 Page - Vishay Siliconix |
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SS10PH9 bảng dữ liệu(HTML) 1 Page - Vishay Siliconix |
1 / 5 page Vishay General Semiconductor SS10PH9 & SS10PH10 Preliminary Document Number 89000 24-Jul-06 www.vishay.com 1 High Current Density Surface Mount High-Voltage Schottky Rectifier FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Guardring for overvoltage protection • High Barrier Technology, Tj = 175 °C Maximum • Low leakage current • Meets MSL level 1, per J-STD-020C • Solder Dip 260 °C, 40 seconds • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, free-wheeling diodes, dc-to-dc converters or polarity protection application. MECHANICAL DATA Case: TO-277A (SMPC) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade Polarity: As marked TO-277A (SMPC) Anode 1 Anode 2 Cathode K K 2 1 MAJOR RATINGS AND CHARACTERISTICS IF(AV) 10 A VRRM 90 V, 100 V IFSM 200 A EAS 20 mJ VF at IF = 10 A 0.661 V IR 0.3 µA Tj max. 175 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS10PH9 SS10PH10 UNIT Device marking code 10H9 10H10 Maximum repetitive peak reverse voltage VRRM 90 100 V Maximum average forward rectified current (see Fig. 1) IF(AV) 10 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 200 A Non-repetitive avalanche energy at IAS = 2 A, L = 10 mH, Tj = 25 °C EAS 20 mJ Voltage rate of change (rated VR) dv/dt 10000 V/µs Operating junction and storage temperature range TJ, TSTG - 55 to + 175 °C |
Số phần tương tự - SS10PH9 |
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Mô tả tương tự - SS10PH9 |
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