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SS12T3 bảng dữ liệu(PDF) 1 Page - ON Semiconductor |
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1 / 5 page © Semiconductor Components Industries, LLC, 2006 September, 2006 − Rev. 0 1 Publication Order Number: NSS12600CF8/D NSS12600CF8T1G 12 V, 6.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. • This is a Pb−Free Device MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO −12 Vdc Collector-Base Voltage VCBO −12 Vdc Emitter-Base Voltage VEBO −7.0 Vdc Collector Current − Continuous IC −5.0 Adc Collector Current − Peak ICM −6.0 A Electrostatic Discharge ESD HBM Class 3B MM Class C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation, TA = 25°C Derate above 25°C PD (Note 1) 830 6.7 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 150 °C/W Total Device Dissipation, TA = 25°C Derate above 25°C PD (Note 2) 1.4 11.1 W mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 90 °C/W Thermal Resistance, Junction−to−Lead #1 RqJL (Note 2) 15 °C/W Total Device Dissipation (Single Pulse < 10 sec) PDsingle (Notes 2 & 3) 2.75 W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ 100 mm2, 1 oz copper traces. 2. FR−4 @ 500 mm2, 1 oz copper traces. 3. Thermal response. COLLECTOR 1, 2, 3, 6, 7, 8 4 BASE 5 EMITTER http://onsemi.com Device Package Shipping† ORDERING INFORMATION †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ChipFET] CASE 1206A STYLE 4 MARKING DIAGRAM C C C B C C C E PIN CONNECTIONS 5 6 7 81 2 3 4 VE = Specific Device Code M = Date Code G = Pb−Free Package NSS12600CF8T1G ChipFET (Pb−Free) 3000/ Tape & Reel −12 VOLTS, 6.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 45 mW VE M G |
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