công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
|
SS12T3 bảng dữ liệu(PDF) 2 Page - ON Semiconductor |
|
SS12T3 bảng dữ liệu(HTML) 2 Page - ON Semiconductor |
2 / 5 page NSS12100XV6T1G http://onsemi.com 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) 500 4.0 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 250 °C/W Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) 650 5.2 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 192 °C/W Thermal Resistance, Junction−to−Lead 6 RqJL 105 °C/W Total Device Dissipation (Single Pulse < 10 sec.) PD Single 1.0 W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage, (IC = −10 mAdc, IB = 0) V(BR)CEO −12 − − Vdc Collector −Base Breakdown Voltage, (IC = −0.1 mAdc, IE = 0) V(BR)CBO −12 − − Vdc Emitter −Base Breakdown Voltage, (IE = −0.1 mAdc, IC = 0) V(BR)EBO −5.0 − − Vdc Collector Cutoff Current, (VCB = −12 Vdc, IE = 0) ICBO − −0.02 −0.1 mAdc Emitter Cutoff Current, (VCES = −5.0 Vdc, IE = 0) IEBO − −0.03 −0.1 mAdc ON CHARACTERISTICS DC Current Gain (Note 3) (IC = −10 mA, VCE = −2.0 V) (IC = −500 mA, VCE = −2.0 V) (IC = −1.0 A, VCE = −2.0 V) hFE 200 100 90 − − − − − − Collector −Emitter Saturation Voltage (Note 3) (IC = −0.05 A, IB = −0.005 A) (Note 4) (IC = −0.1 A, IB = −0.002 A) (IC = −0.1 A, IB = −0.010 A) (IC = −0.5 A, IB = −0.050 A) (IC = −1.0 A, IB = −0.100 A) VCE(sat) − − − − − −0.030 −0.080 −0.050 −0.200 −0.400 −0.040 −0.100 −0.060 −0.225 −0.440 V Base −Emitter Saturation Voltage (Note 3) (IC = −1.0 A, IB = −0.01 A) VBE(sat) − 0.95 −1.15 V Base −Emitter Turn−on Voltage (Note 3) (IC = −2.0 A, VCE = −3.0 V) VBE(on) − −1.05 −1.15 V Input Capacitance (VEB = −0.5 V, f = 1.0 MHz) Cibo − 50 pF Output Capacitance (VCB = −3.0 V, f = 1.0 MHz) Cobo − 20 pF 1. FR−4 @ 100 mm2, 1 oz copper traces. 2. FR−4 @ 500 mm2, 1 oz copper traces. 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. 4. Guaranteed by design but not tested. |
Số phần tương tự - SS12T3 |
|
Mô tả tương tự - SS12T3 |
|
|
Link URL |
Chính sách bảo mật |
ALLDATASHEET.VN |
Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không? [ DONATE ] |
Alldatasheet là | Quảng cáo | Liên lạc với chúng tôi | Chính sách bảo mật | Trao đổi link | Tìm kiếm theo nhà sản xuất All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |