MCR12LN datasheet(1/5 Pages) ONSEMI

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December, 2005 − Rev. 2

1

Publication Order Number:

MCR12L/D

MCR12LD, MCR12LM,

MCR12LN

Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Designed primarily for half−wave ac control applications, such as

motor controls, heating controls, and power supplies; or wherever

half−wave, silicon gate−controlled devices are needed.

Features

• Blocking Voltage to 800 Volts

• On−State Current Rating of 12 Amperes RMS at 80°C

• High Surge Current Capability − 100 Amperes

• Rugged, Economical TO−220AB Package

• Glass Passivated Junctions for Reliability and Uniformity

• Minimum and Maximum Values of IGT, VGT and IH Specified for

Ease of Design

• High Immunity to dv/dt − 100 V/msec Minimum at 125°C

• Pb−Free Packages are Available*

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off−State Voltage (Note 1)

(TJ = −40 to 125°C, Sine Wave,

50 to 60 Hz, Gate Open)

MCR12LD

MCR12LM

MCR12LN

VDRM,

VRRM

400

600

800

V

On-State RMS Current

(180

° Conduction Angles; TC = 80°C)

IT(RMS)

12

A

Peak Non-repetitive Surge Current

(1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C)

ITSM

100

A

Circuit Fusing Consideration (t = 8.3 ms)

I2t

41

A2sec

Forward Peak Gate Power

(Pulse Width

≤ 1.0 ms, TC = 80°C)

PGM

5.0

W

Forward Average Gate Power

(t = 8.3 ms, TC = 80°C)

PG(AV)

0.5

W

Forward Peak Gate Current

(Pulse Width

≤ 1.0 ms, TC = 80°C)

IGM

2.0

A

Operating Junction Temperature Range

TJ

−40 to 125

°C

Storage Temperature Range

Tstg

−40 to 150

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings

apply for zero or negative gate voltage; positive gate voltage shall not be

applied concurrent with negative potential on the anode. Blocking voltages

shall not be tested with a constant current source such that the voltage ratings

of the devices are exceeded.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

SCRs

12 AMPERES RMS

400 thru 800 VOLTS

TO−220AB

CASE 221A−09

STYLE 3

1

http://onsemi.com

A

= Assembly Location

Y

= Year

WW

= Work Week

x

= D, M, or N

G

= Pb−Free Package

AKA

= Diode Polarity

2

3

Device

Package

Shipping

ORDERING INFORMATION

MCR12LD

TO−220AB

50 Units / Rail

MCR12LN

TO−220AB

50 Units / Rail

MCR12LDG

TO−220AB

(Pb−Free)

50 Units / Rail

MCR12LNG

TO−220AB

(Pb−Free)

50 Units / Rail

Preferred devices are recommended choices for future use

and best overall value.

MCR12LM

TO−220AB

50 Units / Rail

MCR12LMG

TO−220AB

(Pb−Free)

50 Units / Rail

K

G

A

PIN ASSIGNMENT

1

2

3

Anode

Gate

Cathode

4

Anode

AY WW

MCR12LxG

AKA

MARKING

DIAGRAM

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