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ADG1233YCPZ-REEL7 bảng dữ liệu(PDF) 1 Page - Analog Devices |
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1 / 16 page Low Capacitance, Triple/Quad SPDT ±15 V/+12 V i CMOS™ Switches ADG1233/ADG1234 Rev. A Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibilityis assumedbyAnalogDevicesforitsuse,norforanyinfringements of patents or other rightsofthirdpartiesthatmayresultfromitsuse.Specificationssubjecttochangewithoutnotice.No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2006 Analog Devices, Inc. All rights reserved. FEATURES 1.5 pF off capacitance 0.5 pC charge injection 33 V supply range 120 Ω on resistance Fully specified at ±15 V/+12 V 3 V logic-compatible inputs Rail-to-rail operation Break-before-make switching action 16-lead TSSOP, 20-lead TSSOP, and 4 mm × 4 mm LFCSP Typical power consumption (<0.03 μW) APPLICATIONS Audio and video routing Automatic test equipment Data acquisition systems Battery-powered systems Sample-and-hold systems Communication systems GENERAL DESCRIPTION The ADG1233 and ADG1234 are monolithic iCMOS analog switches comprising three independently selectable single-pole, double throw SPDT switches and four independently selectable SPDT switches, respectively. All channels exhibit break-before-make switching action preventing momentary shorting when switching channels. An EN input on the ADG1233 and ADG1234 is used to enable or disable the device. When disabled, all channels are switched off. FUNCTIONAL BLOCK DIAGRAMS ADG1233 S1B D1 S1A S2A IN2 IN1 IN3 D2 S2B S3A D3 S3B SWITCHES SHOWN FOR A LOGIC 1 INPUT LOGIC EN Figure 1. SWITCHES SHOWN FOR A LOGIC 1 INPUT ADG1234 S1B D1 S1A S2A IN2 IN1 IN3 D2 S2B S4B D4 S4A S3A D3 S3B LOGIC EN IN4 Figure 2. The iCMOS (industrial-CMOS) modular manufacturing process combines a high voltage complementary metal-oxide semi- conductor (CMOS) and bipolar technologies. It enables the development of a wide range of high performance analog ICs capable of 33 V operation in a footprint that no other generation of high voltage parts has been able to achieve. Unlike analog ICs using conventional CMOS processes, iCMOS components can tolerate high supply voltages while providing increased perfor- mance, dramatically lowered power consumption, and reduced package size. The ultralow capacitance and charge injection of these multiplexers make them ideal solutions for data acquisition and sample-and- hold applications, where low glitch and fast settling are required. Fast switching speed coupled with high signal bandwidth make the parts suitable for video signal switching. iCMOS construction ensures ultralow power dissipation, making the parts ideally suited for portable and battery-powered instruments. PRODUCT HIGHLIGHTS 1. 1.5 pF off capacitance (±15 V supply). 2. 0.5 pC charge injection. 3. 3 V logic-compatible digital input, VIH = 2.0 V, VIL = 0.8 V. 4. 16-lead TSSOP, 20-lead TSSOP, and 4 mm × 4 mm LFCSP. |
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