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4 / 89 page 2 Am29BDS128H/Am29BDS640H 27024B3 May 10, 2006 D A TA SH EE T GENERAL DESCRIPTION The Am29BDS128H/Am29BDS640H is a 128 or 64 Mbit, 1.8 Volt-only, simultaneous Read/Write, Burst Mode Flash mem- ory device, organized as 8,388,608 or 4,194,304 words of 16 bits each. This device uses a single VCC of 1.65 to 1.95 V to read, program, and erase the memory array. A 12.0-volt VHH on ACC may be used for faster program performance if de- sired. The device can also be programmed in standard EPROM programmers. At 75 MHz, the device provides a burst access of 9.3 ns at 30 pF with a latency of 49 ns at 30 pF. At 66 MHz, the device provides a burst access of 11 ns at 30 pF with a latency of 56 ns at 30 pF. At 54 MHz, the device provides a burst ac- cess of 13.5 ns at 30 pF with a latency of 69ns at 30 pF. The device operates within the industrial temperature range of -40°C to +85°C. The device is offered in FBGA packages. The Simultaneous Read/Write architecture provides simul- taneous operation by dividing the memory space into four banks. The device can improve overall system performance by allowing a host system to program or erase in one bank, then immediately and simultaneously read from another bank, with zero latency. This releases the system from wait- ing for the completion of program or erase operations. The device is divided as shown in the following table: The VersatileIO™ (VIO) control allows the host system to set the voltage levels that the device generates at its data out- puts and the voltages tolerated at its data inputs to the same voltage level that is asserted on the VIO pin. The device uses Chip Enable (CE#), Write Enable (WE#), Address Valid (AVD#) and Output Enable (OE#) to control asynchronous read and write operations. For burst opera- tions, the device additionally requires Ready (RDY), and Clock (CLK). This implementation allows easy interface with minimal glue logic to a wide range of microprocessors/micro- controllers for high performance read operations. The burst read mode feature gives system designers flexibil- ity in the interface to the device. The user can preset the burst length and wrap through the same memory space, or read the flash array in continuous mode. The clock polarity feature provides system designers a choice of active clock edges, either rising or falling. The ac- tive clock edge initiates burst accesses and determines when data will be output. The device is entirely command set compatible with the JEDEC 42.4 single-power-supply Flash standard. Com- mands are written to the command register using standard microprocessor write timing. Register contents serve as in- puts to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch ad- dresses and data needed for the programming and erase operations. Reading data out of the device is similar to read- ing from other Flash or EPROM devices. The Erase Suspend/Erase Resume feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. True background erase can thus be achieved. If a read is needed from the SecSi Sector area (One Time Pro- gram area) after an erase suspend, then the user must use the proper command sequence to enter and exit this region. The hardware RESET# pin terminates any operation in progress and resets the internal state machine to reading array data. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the system microprocessor to read boot-up firm- ware from the Flash memory device. The host system can detect whether a program or erase op- eration is complete by using the device status bit DQ7 (Data# Polling) and DQ6/DQ2 (toggle bits). After a program or erase cycle has been completed, the device automatically returns to reading array data. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data con- tents of other sectors. The device is fully erased when shipped from the factory. Hardware data protection measures include a low VCC de- tector that automatically inhibits write operations during power transitions. The device also offers two types of data protection at the sector level. When at VIL, WP# locks the four highest and four lowest boot sectors. The device offers two power-saving features. When ad- dresses have been stable for a specified amount of time, the device enters the automatic sleep mode. The system can also place the device into the standby mode. Power con- sumption is greatly reduced in both modes. AMD Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. The device electri- cally erases all bits within a sector simultaneously via Fowler-Nordheim tunnelling. The data is programmed using hot electron injection. Bank Quantity Size 128 Mb 64 Mb A 8 8 4 Kwords 31 15 32 Kwords B 96 48 32 Kwords C 96 48 32 Kwords D 31 15 32 Kwords 8 8 4 Kwords |
Số phần tương tự - AM29BDS640H |
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Mô tả tương tự - AM29BDS640H |
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