Preliminary
This is a product that has fixed target specifications but are subject
Ramtron International Corporation
to change pending characterization results.
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
Rev. 1.4
Oct. 2005
Page 1 of 14
FM20L08
1Mbit Bytewide FRAM Memory – Extended Temp.
Features
1Mbit Ferroelectric Nonvolatile RAM
•
Organized as 128Kx8
•
Unlimited Read/Write Cycles
•
NoDelay™ Writes
•
Page Mode Operation to 33MHz
•
Advanced High-Reliability Ferroelectric Process
SRAM Replacement
•
JEDEC 128Kx8 SRAM pinout
•
60 ns Access Time, 350 ns Cycle Time
System Supervisor
•
Low Voltage monitor drives external /LVL signal
•
Write protects memory for low voltage condition
•
Software programmable block write protect
Superior to Battery-backed SRAM Modules
•
No battery concerns
•
Monolithic reliability
•
True surface mount solution, no rework steps
•
Superior for moisture, shock, and vibration
•
Resistant to negative voltage undershoots
Low Power Operation
•
3.3V +10%, -5% Power Supply
•
22 mA Active Current
Industry Standard Configurations
•
Extended Temperature -25
° C to +85° C
•
32-pin “green” TSOP (-TG)
Description
The FM20L08 is a 128K x 8 nonvolatile memory that
reads
and
writes
like
a
standard
SRAM.
A
ferroelectric random access memory or FRAM is
nonvolatile, which means that data is retained after
power is removed. It provides data retention for over
10 years while eliminating the reliability concerns,
functional
disadvantages,
and
system
design
complexities of battery-backed SRAM (BBSRAM).
Fast write timing and unlimited write endurance make
FRAM superior to other types of memory.
In-system operation of the FM20L08 is very similar
to other RAM devices and can be used as a drop-in
replacement for standard SRAM. Read and write
cycles may be triggered by /CE or simply by
changing the address. The FRAM memory is
nonvolatile due to its unique ferroelectric memory
process. These features make the FM20L08 ideal for
nonvolatile memory applications requiring frequent
or rapid writes in the form of an SRAM.
The FM20L08 includes a voltage monitor function
that monitors the power supply voltage. It asserts an
active-low signal that indicates the memory is write-
protected when VDD drops below a critical threshold.
When the /LVL signal is low, the memory is
protected against an inadvertent access and data
corruption.
The FM20L08 also features software-controlled write
protection. The memory array is divided into 8
uniform blocks, each of which can be individually
write protected.
Device
specifications
are
guaranteed
over
the
temperature range -25°C to +85°C.
Pin Configuration
Ordering Information
FM20L08-60-TG
60 ns access, 32-pin
“Green” TSOP
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A11
A9
A8
A13
WE
DNU
A15
VDD
LVL
A16
A14
A12
A7
A6
A5
A4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
VSS
DQ2
DQ1
DQ0
A0
A1
A2
A3