BF1102 datasheet(4/12 Pages) PHILIPS

tên linh kiện	BF1102

Giải thích chi tiết về linh kiện	Dual N-channel dual gate MOS-FET

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4 / 12 page

1999 Jul 08

4

Philips Semiconductors

Preliminary specification

Dual N-channel dual gate MOS-FET

BF1102

STATIC CHARACTERISTICS

Tj =25

°C unless otherwise specified.

Notes

1.

RG1 connects gate 1 to VGG =5V.

DYNAMIC CHARACTERISTICS

Common source; Tamb =25

°C; VG2-S =4V; VDS =5V; ID = 15 mA; unless otherwise specified.

Notes

1.

Not used MOS-FET: VG1-S =0; VDS =0.

2.

Measured in test circuit of Fig.17.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per MOS-FET unless otherwise specified

V(BR)DSS

drain-source breakdown voltage

VG1-S =VG2-S =0; ID =10

µA7

−

V

V(BR)G1-SS

gate-source breakdown voltage

VGS =VDS =0; IG1-S =10mA

6

15

V

V(BR)G2-SS

gate-source breakdown voltage

VGS =VDS =0; IG2-S =5mA

6

15

V

V(F)S-G1

forward source-gate voltage

VG2-S =VDS =0; IS-G1 =

−10 mA

0.5

1.5

V

V(F)S-G2

forward source-gate voltage

VG1-S =VDS =0; IS-G2 =

−10 mA

0.5

1.5

V

VG1-S(th)

gate-source threshold voltage

VDS =5V; VG2-S =4 V; ID =20

µA0.3

1

V

VG2-S(th)

gate-source threshold voltage

VDS =5V; VG1-S =4 V; ID =20

µA0.3

1.2

V

IDSX

drain-source current

VG2-S =4V; VDS =5 V; RG = 120 k

Ω; note 1 12

20

mA

IG1-S

gate cut-off current

VG1-S =5V; VG2-S =VDS =0

−

50

nA

IG2-S

gate cut-off current

VG2-S =5V; VG1-S =VDS =0

−

20

nA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per MOS-FET unless otherwise specified (note 1)

yfs

forward transfer admittance

Tj =25

°C

3643

50mS

Cig1-ss

input capacitance at gate 1

f = 1 MHz

2

2.8

3.6

pF

Cig2-ss

input capacitance at gate 2

f = 1 MHz

−−

7pF

Coss

output capacitance

f = 1 MHz

−

1.6

2.5

pF

Crss

reverse transfer capacitance f = 1 MHz

−

30

50

fF

F

noise figure

f = 800 MHz; YS =YSopt

−

22.8

dB

Xmod

cross-modulation

input level for k = 1% at 0 dB AGC;

fw =50MHz; funw =60MHz; (note2)

85

−−

dB

µV

input level for k = 1% at 40 dB AGC;

fw =50MHz; funw =60MHz; (note2)

100

−−

dB

µV

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